Changes in transition temperature of the Si(111)1 × 1-7 × 7 phase transition observed under various oxygen environments

Katsuyuki Tsukui, Kazuhiko Endo, Ryu Hasunuma, Osamu Hirabayashi, Nobuaki Yagi, Hajime Aihara, Toshiaki Osaka, Iwao Ohdomari

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8 Citations (Scopus)


In order to investigate the role of oxygen atoms in the Si(111)1 × 1-7 × 7 phase transition, the transition was examined accurately under extremely high vacuum conditions (< 4 × 10-10 Pa. Transition temperature was measured for the modified-FZ crystal (resisivity; 4 × 104 Ω cm) in which the oxygen concentration was 7.0 × 1015 atoms/cm3, and for a CZ crystal )resistivity: 5 Ω cm) which contained 6.4 × 1017 oxygen/cm3. The transition point was decided to be 1049 K for the modified-FZ crystal, and was lower than that for the CZ crystal by 40 K. By taking advantage of the modified-FZ in which the contribution of outdiffusion to the surface equilibrium oxygen concentration is expected to be quite low, the oxygen concentration in the surface region was controlled by quenching right after high temperature flashing and/or oxygen exposure. The transition temperature was changed depending on the oxygen concentration. These experimental facts indicate that the difference in the transition temperatures can be ascribed to the influence of oxygen concentration on the stability of the 7 × 7 structure.

Original languageEnglish
Pages (from-to)L553-L560
JournalSurface Science
Issue number3
Publication statusPublished - 1995 May 1
Externally publishedYes


  • Reflection high-energy electron diffraction (RHEED)
  • Surface structure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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