TY - GEN
T1 - Change of the electronic conductivity of graphene nanoribbons and carbon nanotubes caused by a local deformation
AU - Ohnishi, Masato
AU - Suzuki, Ken
AU - Miura, Hideo
PY - 2013/12/31
Y1 - 2013/12/31
N2 - Since the discovery of carbon nanotubes (CNTs), graphene and graphene nanoribbons (GNRs), many efforts have been made to apply these carbon nanomaterials to electronic devices and sensors. Strain sensitivity of CNTs and GNRs is one of their unique electronic properties. However, the effect of complex strain field such as buckling deformation on the electronic state of CNTs remains to be unclear. In this study, we investigated the relationship between the electronic state and the local geometrical structure of deformed CNTs and GNRs. Comparing the electronic state of CNTs and that of GNRs under deformation, we found that the electronic state can be predicted by analyzing the geometric structure of deformed CNTs or GNRs.
AB - Since the discovery of carbon nanotubes (CNTs), graphene and graphene nanoribbons (GNRs), many efforts have been made to apply these carbon nanomaterials to electronic devices and sensors. Strain sensitivity of CNTs and GNRs is one of their unique electronic properties. However, the effect of complex strain field such as buckling deformation on the electronic state of CNTs remains to be unclear. In this study, we investigated the relationship between the electronic state and the local geometrical structure of deformed CNTs and GNRs. Comparing the electronic state of CNTs and that of GNRs under deformation, we found that the electronic state can be predicted by analyzing the geometric structure of deformed CNTs or GNRs.
KW - carbon nanotube
KW - electronic state
KW - graphene nanoribbon
KW - strain
UR - http://www.scopus.com/inward/record.url?scp=84891106898&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84891106898&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2013.6650592
DO - 10.1109/SISPAD.2013.6650592
M3 - Conference contribution
AN - SCOPUS:84891106898
SN - 9781467357364
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 131
EP - 134
BT - 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
T2 - 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Y2 - 3 September 2013 through 5 September 2013
ER -