Change of the electronic conductivity of graphene nanoribbons and carbon nanotubes caused by a local deformation

Masato Ohnishi, Ken Suzuki, Hideo Miura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Since the discovery of carbon nanotubes (CNTs), graphene and graphene nanoribbons (GNRs), many efforts have been made to apply these carbon nanomaterials to electronic devices and sensors. Strain sensitivity of CNTs and GNRs is one of their unique electronic properties. However, the effect of complex strain field such as buckling deformation on the electronic state of CNTs remains to be unclear. In this study, we investigated the relationship between the electronic state and the local geometrical structure of deformed CNTs and GNRs. Comparing the electronic state of CNTs and that of GNRs under deformation, we found that the electronic state can be predicted by analyzing the geometric structure of deformed CNTs or GNRs.

Original languageEnglish
Title of host publication2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages131-134
Number of pages4
DOIs
Publication statusPublished - 2013 Dec 31
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 2013 Sep 3 → 2013 Sep 5

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
CountryUnited Kingdom
CityGlasgow
Period13/9/3 → 13/9/5

Keywords

  • carbon nanotube
  • electronic state
  • graphene nanoribbon
  • strain

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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    Ohnishi, M., Suzuki, K., & Miura, H. (2013). Change of the electronic conductivity of graphene nanoribbons and carbon nanotubes caused by a local deformation. In 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 (pp. 131-134). [6650592] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2013.6650592