Change of the electronic conductivity of cnts and graphene sheets caused by a three-dimensional strain field

Masato Ohnishi, Ken Suzuki, Hideo Miura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The prediction of the change in the conductivity of carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) under strain is very important to assure the reliability of the performance of CNT-based devices, such as transistors, sensors, actuators, etc. In this study, the change of the electronic state of CNTs and GNRs caused by their deformation was analyzed. We found that the change of the electronic sate of CNTs was mainly dominated by two factors; (a) distortion of a six-membered ring due to the change in the C-C bond length and (b) increase in the local curvature of the tube. The increase of the curvature caused the orbital hybridization. The electronic state of GNRs also changed drastically when the hybridization was occurred by the curvature deformation.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages86-89
Number of pages4
ISBN (Electronic)9780615717562
Publication statusPublished - 2012
Event2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States
Duration: 2012 Sep 52012 Sep 7

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
Country/TerritoryUnited States
CityDenver
Period12/9/512/9/7

Keywords

  • Carbon nanotube
  • Conductivity
  • DFT
  • Graphene nanoribbon
  • Strain
  • Tight-binding approach

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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