Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent

Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, Hajime Okumura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages14-17
Number of pages4
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 2015 Jan 1
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: 2014 Sep 212014 Sep 25

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period14/9/2114/9/25

Keywords

  • Additive
  • Impurity
  • Solution growth
  • Surface morphology

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Komatsu, N., Mitani, T., Takahashi, T., Kato, T., Kurashige, K., Matsumoto, Y., Ujihara, T., & Okumura, H. (2015). Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 14-17). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.14