Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent

Naoyoshi Komatsu; Takeshi Mitani; Tetsuo Takahashi; Tomohisa Kato; Kazuhisa Kurashige; Yuji Matsumoto; Toru Ujihara; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.14

Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent

Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, Hajime Okumura

ENG - Applied Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2014
Editors	Didier Chaussende, Gabriel Ferro
Publisher	Trans Tech Publications Ltd
Pages	14-17
Number of pages	4
ISBN (Print)	9783038354789
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.821-823.14
Publication status	Published - 2015
Event	European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France Duration: 2014 Sep 21 → 2014 Sep 25

Publication series

Name	Materials Science Forum
Volume	821-823
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
Country	France
City	Grenoble
Period	14/9/21 → 14/9/25

Keywords

Additive
Impurity
Solution growth
Surface morphology

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Komatsu, N., Mitani, T., Takahashi, T., Kato, T., Kurashige, K., Matsumoto, Y., Ujihara, T., & Okumura, H. (2015). Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 14-17). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.14

Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. / Komatsu, Naoyoshi; Mitani, Takeshi; Takahashi, Tetsuo; Kato, Tomohisa; Kurashige, Kazuhisa; Matsumoto, Yuji; Ujihara, Toru; Okumura, Hajime.

Silicon Carbide and Related Materials 2014. ed. / Didier Chaussende; Gabriel Ferro. Trans Tech Publications Ltd, 2015. p. 14-17 (Materials Science Forum; Vol. 821-823).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Komatsu, N, Mitani, T, Takahashi, T, Kato, T, Kurashige, K, Matsumoto, Y, Ujihara, T & Okumura, H 2015, Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. in D Chaussende & G Ferro (eds), Silicon Carbide and Related Materials 2014. Materials Science Forum, vol. 821-823, Trans Tech Publications Ltd, pp. 14-17, European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 14/9/21. https://doi.org/10.4028/www.scientific.net/MSF.821-823.14

Komatsu N, Mitani T, Takahashi T, Kato T, Kurashige K, Matsumoto Y et al. Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. In Chaussende D, Ferro G, editors, Silicon Carbide and Related Materials 2014. Trans Tech Publications Ltd. 2015. p. 14-17. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.821-823.14

Komatsu, Naoyoshi ; Mitani, Takeshi ; Takahashi, Tetsuo ; Kato, Tomohisa ; Kurashige, Kazuhisa ; Matsumoto, Yuji ; Ujihara, Toru ; Okumura, Hajime. / Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. Silicon Carbide and Related Materials 2014. editor / Didier Chaussende ; Gabriel Ferro. Trans Tech Publications Ltd, 2015. pp. 14-17 (Materials Science Forum).

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abstract = "In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.",

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AU - Komatsu, Naoyoshi

AU - Mitani, Takeshi

AU - Takahashi, Tetsuo

AU - Kato, Tomohisa

AU - Kurashige, Kazuhisa

AU - Matsumoto, Yuji

AU - Ujihara, Toru

AU - Okumura, Hajime

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N2 - In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.

AB - In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.

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KW - Impurity

KW - Solution growth

KW - Surface morphology

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ER -

Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent

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