TY - GEN
T1 - Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent
AU - Komatsu, Naoyoshi
AU - Mitani, Takeshi
AU - Takahashi, Tetsuo
AU - Kato, Tomohisa
AU - Kurashige, Kazuhisa
AU - Matsumoto, Yuji
AU - Ujihara, Toru
AU - Okumura, Hajime
N1 - Publisher Copyright:
© (2015) Trans Tech Publications, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2015
Y1 - 2015
N2 - In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.
AB - In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.
KW - Additive
KW - Impurity
KW - Solution growth
KW - Surface morphology
UR - http://www.scopus.com/inward/record.url?scp=84950315679&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84950315679&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.821-823.14
DO - 10.4028/www.scientific.net/MSF.821-823.14
M3 - Conference contribution
AN - SCOPUS:84950315679
SN - 9783038354789
T3 - Materials Science Forum
SP - 14
EP - 17
BT - Silicon Carbide and Related Materials 2014
A2 - Chaussende, Didier
A2 - Ferro, Gabriel
PB - Trans Tech Publications Ltd
T2 - European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
Y2 - 21 September 2014 through 25 September 2014
ER -