Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent

Naoyoshi Komatsu; Takeshi Mitani; Tetsuo Takahashi; Tomohisa Kato; Kazuhisa Kurashige; Yuji Matsumoto; Toru Ujihara; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.14

Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent

Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, Hajime Okumura

ENG - Applied Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2014
Editors	Didier Chaussende, Gabriel Ferro
Publisher	Trans Tech Publications Ltd
Pages	14-17
Number of pages	4
ISBN (Print)	9783038354789
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.821-823.14
Publication status	Published - 2015 Jan 1
Event	European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France Duration: 2014 Sep 21 → 2014 Sep 25

Publication series

Name	Materials Science Forum
Volume	821-823
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
Country	France
City	Grenoble
Period	14/9/21 → 14/9/25

Keywords

Additive
Impurity
Solution growth
Surface morphology

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/MSF.821-823.14

Fingerprint Dive into the research topics of 'Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent'. Together they form a unique fingerprint.

Cite this

Komatsu, N., Mitani, T., Takahashi, T., Kato, T., Kurashige, K., Matsumoto, Y., Ujihara, T., & Okumura, H. (2015). Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 14-17). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.14

Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. / Komatsu, Naoyoshi; Mitani, Takeshi; Takahashi, Tetsuo; Kato, Tomohisa; Kurashige, Kazuhisa; Matsumoto, Yuji; Ujihara, Toru; Okumura, Hajime.

Silicon Carbide and Related Materials 2014. ed. / Didier Chaussende; Gabriel Ferro. Trans Tech Publications Ltd, 2015. p. 14-17 (Materials Science Forum; Vol. 821-823).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Komatsu, N, Mitani, T, Takahashi, T, Kato, T, Kurashige, K, Matsumoto, Y, Ujihara, T & Okumura, H 2015, Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. in D Chaussende & G Ferro (eds), Silicon Carbide and Related Materials 2014. Materials Science Forum, vol. 821-823, Trans Tech Publications Ltd, pp. 14-17, European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 14/9/21. https://doi.org/10.4028/www.scientific.net/MSF.821-823.14

Komatsu N, Mitani T, Takahashi T, Kato T, Kurashige K, Matsumoto Y et al. Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. In Chaussende D, Ferro G, editors, Silicon Carbide and Related Materials 2014. Trans Tech Publications Ltd. 2015. p. 14-17. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.821-823.14

Komatsu, Naoyoshi ; Mitani, Takeshi ; Takahashi, Tetsuo ; Kato, Tomohisa ; Kurashige, Kazuhisa ; Matsumoto, Yuji ; Ujihara, Toru ; Okumura, Hajime. / Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. Silicon Carbide and Related Materials 2014. editor / Didier Chaussende ; Gabriel Ferro. Trans Tech Publications Ltd, 2015. pp. 14-17 (Materials Science Forum).

@inproceedings{e5f2fdfc77454d75844ffa61d96e1b4d,

title = "Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent",

abstract = "In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.",

keywords = "Additive, Impurity, Solution growth, Surface morphology",

author = "Naoyoshi Komatsu and Takeshi Mitani and Tetsuo Takahashi and Tomohisa Kato and Kazuhisa Kurashige and Yuji Matsumoto and Toru Ujihara and Hajime Okumura",

year = "2015",

month = jan,

day = "1",

doi = "10.4028/www.scientific.net/MSF.821-823.14",

language = "English",

isbn = "9783038354789",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "14--17",

editor = "Didier Chaussende and Gabriel Ferro",

booktitle = "Silicon Carbide and Related Materials 2014",

note = "European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",

}

TY - GEN

T1 - Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent

AU - Komatsu, Naoyoshi

AU - Mitani, Takeshi

AU - Takahashi, Tetsuo

AU - Kato, Tomohisa

AU - Kurashige, Kazuhisa

AU - Matsumoto, Yuji

AU - Ujihara, Toru

AU - Okumura, Hajime

PY - 2015/1/1

Y1 - 2015/1/1

N2 - In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.

AB - In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.

KW - Additive

KW - Impurity

KW - Solution growth

KW - Surface morphology

UR - http://www.scopus.com/inward/record.url?scp=84950315679&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84950315679&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.821-823.14

DO - 10.4028/www.scientific.net/MSF.821-823.14

M3 - Conference contribution

AN - SCOPUS:84950315679

SN - 9783038354789

T3 - Materials Science Forum

SP - 14

EP - 17

BT - Silicon Carbide and Related Materials 2014

A2 - Chaussende, Didier

A2 - Ferro, Gabriel

PB - Trans Tech Publications Ltd

T2 - European Conference on Silicon Carbide and Related Materials, ECSCRM 2014

Y2 - 21 September 2014 through 25 September 2014

ER -