TY - GEN
T1 - Change in electronic properties of carbon nanotubes caused by local distortion under axial compressive strain
AU - Suzuki, Ken
AU - Ohnishi, Masato
AU - Miura, Hideo
PY - 2015/10/5
Y1 - 2015/10/5
N2 - In this study, the change in electronic properties of carbon nanotubes (CNTs) under axial compressive strain was analyzed by using Green's function method based on tight-binding approach. A single (9, 0) CNT structure was used for the calculation. The column buckling of the CNT was occurred and a kink was formed in the buckled CNT with increasing compressive strain. After the formation of a kink, the local density of state (LDOS) at the energy higher than 0.3 eV was strongly localized in the buckled region. The conductance of the CNT with a kink was suppressed by the scattering of electrons due to the localization of LDOS. Therefore, electronic properties of the CNT changes drastically by buckling deformation when CNTs are subject to combined bending and axial compression.
AB - In this study, the change in electronic properties of carbon nanotubes (CNTs) under axial compressive strain was analyzed by using Green's function method based on tight-binding approach. A single (9, 0) CNT structure was used for the calculation. The column buckling of the CNT was occurred and a kink was formed in the buckled CNT with increasing compressive strain. After the formation of a kink, the local density of state (LDOS) at the energy higher than 0.3 eV was strongly localized in the buckled region. The conductance of the CNT with a kink was suppressed by the scattering of electrons due to the localization of LDOS. Therefore, electronic properties of the CNT changes drastically by buckling deformation when CNTs are subject to combined bending and axial compression.
KW - buckling
KW - carbon nanotube
KW - conductance
KW - strain
UR - http://www.scopus.com/inward/record.url?scp=84959333060&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959333060&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2015.7292265
DO - 10.1109/SISPAD.2015.7292265
M3 - Conference contribution
AN - SCOPUS:84959333060
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 88
EP - 91
BT - 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Y2 - 9 September 2015 through 11 September 2015
ER -