Challenges in growth of high-performance scintillator crystals

Dirk Ehrentraut; Akira Yoshikawa; Tsuguo Fukuda

Challenges in growth of high-performance scintillator crystals

Dirk Ehrentraut, Akira Yoshikawa, Tsuguo Fukuda

Materials Design Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Inorganic scintillator crystals are in steadily growing demand. High purity controlled doping and structural perfection of scintillator crystals is inevitable, what certainly is challenging the growth technology. We review our recent progress in the fabrication and characterization of scintillator crystals like 8 inches size BaF₂ (super fast decay of about 600 ps), Pr ³⁺ doped LU₃Al₅O₁₂ and Y ₃Al₅O₁₂ (high light yields) and undoped and In³⁺ doped ZnO. The latter shows two-component super fast decay (fast component 30-60 ps, slow component 250-800 ps), GaN might be the next candidate crystal to show fast luminescence, once good crystal quality is available.

Original language	English
Pages (from-to)	1198-1205
Number of pages	8
Journal	Journal of Optoelectronics and Advanced Materials
Volume	9
Issue number	5
Publication status	Published - 2007 May

Keywords

BaF
GaN
In doped ZnO
LuAlO
Scintillator crystal

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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abstract = "Inorganic scintillator crystals are in steadily growing demand. High purity controlled doping and structural perfection of scintillator crystals is inevitable, what certainly is challenging the growth technology. We review our recent progress in the fabrication and characterization of scintillator crystals like 8 inches size BaF2 (super fast decay of about 600 ps), Pr 3+ doped LU3Al5O12 and Y 3Al5O12 (high light yields) and undoped and In3+ doped ZnO. The latter shows two-component super fast decay (fast component 30-60 ps, slow component 250-800 ps), GaN might be the next candidate crystal to show fast luminescence, once good crystal quality is available.",

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N2 - Inorganic scintillator crystals are in steadily growing demand. High purity controlled doping and structural perfection of scintillator crystals is inevitable, what certainly is challenging the growth technology. We review our recent progress in the fabrication and characterization of scintillator crystals like 8 inches size BaF2 (super fast decay of about 600 ps), Pr 3+ doped LU3Al5O12 and Y 3Al5O12 (high light yields) and undoped and In3+ doped ZnO. The latter shows two-component super fast decay (fast component 30-60 ps, slow component 250-800 ps), GaN might be the next candidate crystal to show fast luminescence, once good crystal quality is available.

AB - Inorganic scintillator crystals are in steadily growing demand. High purity controlled doping and structural perfection of scintillator crystals is inevitable, what certainly is challenging the growth technology. We review our recent progress in the fabrication and characterization of scintillator crystals like 8 inches size BaF2 (super fast decay of about 600 ps), Pr 3+ doped LU3Al5O12 and Y 3Al5O12 (high light yields) and undoped and In3+ doped ZnO. The latter shows two-component super fast decay (fast component 30-60 ps, slow component 250-800 ps), GaN might be the next candidate crystal to show fast luminescence, once good crystal quality is available.

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KW - In doped ZnO

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Challenges in growth of high-performance scintillator crystals

Abstract

Keywords

ASJC Scopus subject areas

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