Challenges in growth of high-performance scintillator crystals

Dirk Ehrentraut, Akira Yoshikawa, Tsuguo Fukuda

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Inorganic scintillator crystals are in steadily growing demand. High purity controlled doping and structural perfection of scintillator crystals is inevitable, what certainly is challenging the growth technology. We review our recent progress in the fabrication and characterization of scintillator crystals like 8 inches size BaF2 (super fast decay of about 600 ps), Pr 3+ doped LU3Al5O12 and Y 3Al5O12 (high light yields) and undoped and In3+ doped ZnO. The latter shows two-component super fast decay (fast component 30-60 ps, slow component 250-800 ps), GaN might be the next candidate crystal to show fast luminescence, once good crystal quality is available.

Original languageEnglish
Pages (from-to)1198-1205
Number of pages8
JournalJournal of Optoelectronics and Advanced Materials
Volume9
Issue number5
Publication statusPublished - 2007 May

Keywords

  • BaF
  • GaN
  • In doped ZnO
  • LuAlO
  • Scintillator crystal

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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