Challenge of MTJ-based nonvolatile logic-in-memory architecture for dark-silicon logic lsi

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4 Citations (Scopus)

Abstract

This paper presents an architecture-level approach, called nonvolatile logic-in-memory (NV-LIM) architecture, to solving performance-wall and power-wall problems in the present CMOS-only-based logic-LSI (Large-Scaled Integration) processors. The use of magnetic tunnel junction devices combined with a CMOS-gate style makes it possible to achieve a high-performance and ultra-low-power logic LSI. Some concrete examples using the proposed method allow you to achieve the desired performance improvement compared to a corresponding CMOS-only-based realization.

Original languageEnglish
Article number1340014
JournalSPIN
Volume3
Issue number4
DOIs
Publication statusPublished - 2013 Dec 1

Keywords

  • logic LSI
  • Logic-in-memory architecture
  • magnetic tunnel junction
  • magneto-resistive random access memory (MRAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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