Cell characteristics of FePt nano-dot memories with a high-k Al 2O 3 blocking oxide

Gae Hun Lee, Jung Min Lee, Hyung Jun Yang, Yun Heub Song, Jichoru Be, Tetsu Tanaka

Research output: Contribution to journalArticle

Abstract

The cell characteristics of an alloy FePt nano-dot (ND) charge trapping memory with a high-k dielectric as a blocking oxide was investigated. Adoption of a high-k Al 2O 3 material as a blocking oxide for the metal nano-dot memory provided a superior scaling of the operation voltage compared to silicon oxide under a similar gate leakage level. For the 40-nm-thick high-k (Al 2O 3) blocking oxide, we confirmed an operation voltage reduction of ~7 V under the same memory window on for silicon dioxide. Also, this device showed a large memory window of 7.8 V and a low leakage current under 10 -10 A in an area of Φ 0.25 mm. From these results, the use of a dielectric (Al 2O 3) as a blocking oxide for a metal nano-dot device is essential, and a metal nano-dot memory with a high-k dielectric will be one of the candidates for a high-density non-volatile memory device.

Original languageEnglish
Pages (from-to)1902-1906
Number of pages5
JournalJournal of the Korean Physical Society
Volume60
Issue number11
DOIs
Publication statusPublished - 2012 Jun 1

Keywords

  • Cell reliability
  • High-k material
  • Leakage current
  • Nano-dot

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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