Cell characteristics of a multiple alloy nano-dots memory structure

Ji Chel Bea, Yun Heub Song, Kang Wook Lee, Gae Hun Lee, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (∼5.2 eV) and extremely high dot density (∼1.2 × 1013 cm -2) was fabricated. Its structural effect for multiple layers was evaluated and compared to the one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with two to four multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN) tunneling could be a candidate structure for future flash memory.

Original languageEnglish
Article number085013
JournalSemiconductor Science and Technology
Volume24
Issue number8
DOIs
Publication statusPublished - 2009 Aug 24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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