Cavity-through deep reactive ion etching of directly-bonded silicon wafers

Piljoong Kang, Shuji Tanaka, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Etched silicon wafers were directly bonded, and then the bonded silicon wafers were deeply etched by Bosch process through etched cavities. This cavity-through DRIE (deep reactive ion etching) was investigated after systematic study on plasma-assisted silicon direct bonding. The first half of this paper mainly reports the generation of voids in wafers directly bonded with N2 or O2 plasma treatment due to H2O release from hydroxy groups in low and high temperature annealing. The second half reports etch profiles and etch rates for cavity-through DRIE using different recipes. Cavity-through DRIE in conjunction with silicon direct bonding is practical and useful for multi-layer MEMS.

Original languageEnglish
Title of host publicationTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages549-553
Number of pages5
DOIs
Publication statusPublished - 2007 Dec 1
Event4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07 - Lyon, France
Duration: 2007 Jun 102007 Jun 14

Publication series

NameTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07
CountryFrance
CityLyon
Period07/6/1007/6/14

Keywords

  • Deep reactive ion etching (DRIE)
  • Direct bonding
  • Multilayer MEMS
  • Plasma treatment

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Kang, P., Tanaka, S., & Esashi, M. (2007). Cavity-through deep reactive ion etching of directly-bonded silicon wafers. In TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 549-553). [4300189] (TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2007.4300189