Cavity less GaAs CW sub-THz TUNNETT oscillators

B. Sundararajan, Kazuomi Endo, Tadao Tanabe, Yutaka Oyama, Piotr Plotka, Jun Ichi Nishizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Tunnel injection transit time diodes (TUNNETT) with 14 nm tunneling layer thicknesses were fabricated with molecular layer epitaxy, and planar patch antennas were designed for 200GHz and 300GHz emission. From the fabricated patch antenna coupled with TUNNETT oscillator, the obtained oscillation frequency was ranging in 177-235 GHz at room temperature with bias current of 300-550 mA (duty 5 %)

Original languageEnglish
Title of host publication34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
DOIs
Publication statusPublished - 2009 Dec 31
Event34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009 - Busan, Korea, Republic of
Duration: 2009 Sep 212009 Sep 25

Publication series

Name34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009

Other

Other34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
CountryKorea, Republic of
CityBusan
Period09/9/2109/9/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

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    Sundararajan, B., Endo, K., Tanabe, T., Oyama, Y., Plotka, P., & Nishizawa, J. I. (2009). Cavity less GaAs CW sub-THz TUNNETT oscillators. In 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009 [5324720] (34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009). https://doi.org/10.1109/ICIMW.2009.5324720