Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films

Woong Lee; Kentaro Watanabe; Kazuhiro Kumagai; Seunghwan Park; Hyunjae Lee; Takafumi Yao; Jiho Chang; Takashi Sekiguchi

doi:10.1093/jmicro/dfr093

Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films

Woong Lee, Kentaro Watanabe, Kazuhiro Kumagai, Seunghwan Park, Hyunjae Lee, Takafumi Yao, Jiho Chang, Takashi Sekiguchi

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The nonuniformity in hydride vapor phase epitaxy (HVPE)-grown thick GaN was studied using cathodoluminescence (CL) technique. It was found that the nonuniform luminescence feature originated from pit-type defects. Two kinds of pit-type defects were distinguished by their morphology: one was hexagonal V-pit surrounded by 10-11 facets and the other was U-pit with 10-11 facets and the blunt bottom. The 10-11 facets of both pits with N-polarity show the strong CL emission due to the oxygen incorporation, while the matrix with Ga-polarity appeared dark in the CL image. The dim CL contrast was observed in the blunt bottom with the mixed polarities. The blunt bottom suggests the filling of pits during the growth, which may be the key to eliminate pit-type defects in free-standing GaN wafer.

Original language	English
Pages (from-to)	25-30
Number of pages	6
Journal	Journal of Electron Microscopy
Volume	61
Issue number	1
DOIs	https://doi.org/10.1093/jmicro/dfr093
Publication status	Published - 2012 Feb 1
Externally published	Yes

Keywords

GaN
HVPE
cathodoluminescence
impurity luminescence
pit
scanning electron microscopy

ASJC Scopus subject areas

Instrumentation

Access to Document

10.1093/jmicro/dfr093

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title = "Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films",

abstract = "The nonuniformity in hydride vapor phase epitaxy (HVPE)-grown thick GaN was studied using cathodoluminescence (CL) technique. It was found that the nonuniform luminescence feature originated from pit-type defects. Two kinds of pit-type defects were distinguished by their morphology: one was hexagonal V-pit surrounded by 10-11 facets and the other was U-pit with 10-11 facets and the blunt bottom. The 10-11 facets of both pits with N-polarity show the strong CL emission due to the oxygen incorporation, while the matrix with Ga-polarity appeared dark in the CL image. The dim CL contrast was observed in the blunt bottom with the mixed polarities. The blunt bottom suggests the filling of pits during the growth, which may be the key to eliminate pit-type defects in free-standing GaN wafer.",

keywords = "GaN, HVPE, cathodoluminescence, impurity luminescence, pit, scanning electron microscopy",

author = "Woong Lee and Kentaro Watanabe and Kazuhiro Kumagai and Seunghwan Park and Hyunjae Lee and Takafumi Yao and Jiho Chang and Takashi Sekiguchi",

year = "2012",

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AU - Lee, Woong

AU - Watanabe, Kentaro

AU - Kumagai, Kazuhiro

AU - Park, Seunghwan

AU - Lee, Hyunjae

AU - Yao, Takafumi

AU - Chang, Jiho

AU - Sekiguchi, Takashi

PY - 2012/2/1

Y1 - 2012/2/1

N2 - The nonuniformity in hydride vapor phase epitaxy (HVPE)-grown thick GaN was studied using cathodoluminescence (CL) technique. It was found that the nonuniform luminescence feature originated from pit-type defects. Two kinds of pit-type defects were distinguished by their morphology: one was hexagonal V-pit surrounded by 10-11 facets and the other was U-pit with 10-11 facets and the blunt bottom. The 10-11 facets of both pits with N-polarity show the strong CL emission due to the oxygen incorporation, while the matrix with Ga-polarity appeared dark in the CL image. The dim CL contrast was observed in the blunt bottom with the mixed polarities. The blunt bottom suggests the filling of pits during the growth, which may be the key to eliminate pit-type defects in free-standing GaN wafer.

AB - The nonuniformity in hydride vapor phase epitaxy (HVPE)-grown thick GaN was studied using cathodoluminescence (CL) technique. It was found that the nonuniform luminescence feature originated from pit-type defects. Two kinds of pit-type defects were distinguished by their morphology: one was hexagonal V-pit surrounded by 10-11 facets and the other was U-pit with 10-11 facets and the blunt bottom. The 10-11 facets of both pits with N-polarity show the strong CL emission due to the oxygen incorporation, while the matrix with Ga-polarity appeared dark in the CL image. The dim CL contrast was observed in the blunt bottom with the mixed polarities. The blunt bottom suggests the filling of pits during the growth, which may be the key to eliminate pit-type defects in free-standing GaN wafer.

KW - GaN

KW - HVPE

KW - cathodoluminescence

KW - impurity luminescence

KW - pit

KW - scanning electron microscopy

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