A study was performed to characterize optical properties of dislocations in gallium nitride (GaN) epilayers. The techniques used were cathodoluminescence combined with transmission electron microscopy (TEM-CL). The results showed that the edge-type dislocation parallel to the c plane was more active than the edge-type threading dislocation, while the screw-type one was inactive.
ASJC Scopus subject areas
- Physics and Astronomy(all)