Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope

N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)

Abstract

A study was performed to characterize optical properties of dislocations in gallium nitride (GaN) epilayers. The techniques used were cathodoluminescence combined with transmission electron microscopy (TEM-CL). The results showed that the edge-type dislocation parallel to the c plane was more active than the edge-type threading dislocation, while the screw-type one was inactive.

Original languageEnglish
Pages (from-to)4315-4319
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number7
DOIs
Publication statusPublished - 2003 Oct 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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