Catalystlike behavior of Si adatoms in the growth of monolayer Al film on Si(111)

Jing Teng, Lixin Zhang, Ying Jiang, Jiandong Guo, Qinlin Guo, Enge Wang, Philipp Ebert, T. Sakurai, Kehui Wu

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)


    The formation mechanism of monolayer Al(111) 1×1 film on the Si(111) √3× √3-Al substrate was studied by scanning tunneling microscopy and first-principles calculations. We found that the Si adatoms on the √3× √3-Al substrate play important roles in the growth process. The growth of Al1×1 islands is mediated by the formation and decomposition of SiAl2 clusters. Based on experiments and theoretical simulations we propose a model where free Si atoms exhibit a catalystlike behavior by capturing and releasing Al atoms during the Al film growth.

    Original languageEnglish
    Article number014704
    JournalJournal of Chemical Physics
    Issue number1
    Publication statusPublished - 2010 Jul 7

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physical and Theoretical Chemistry


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