Carrier tuning of type-I clathrate single crystals

Jun Tang; Zhaofei Li; Takuya Nishiro; Kazumi Sato; Katsumi Tanigaki

doi:10.1016/j.jpcs.2009.12.016

Carrier tuning of type-I clathrate single crystals

Jun Tang, Zhaofei Li, Takuya Nishiro, Kazumi Sato, Katsumi Tanigaki

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A method to precisely control the carrier properties for single crystalline type-I clathrate is investigated. Polycrystalline samples are synthesized first according to the theoretical ratio for carrier control, and followed by Ga flux single crystal growth process. The composition of single crystals was determined by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP), and the detailed structure was determined by using high-resolution X-ray diffraction. The carrier type and concentration can be tuned by changing the Ba/Ga composition for Ba₈Ga₁₆Ge₃₀ (BGG), while only n-type carrier can be achieved in Sr₈Ga₁₆Ge₃₀ (SGG). X-ray diffraction analysis shows that the different occupancy factors of the endohedral chemical species may be the reason for this carrier difference between BGG and SGG.

Original language	English
Pages (from-to)	480-482
Number of pages	3
Journal	Journal of Physics and Chemistry of Solids
Volume	71
Issue number	4
DOIs	https://doi.org/10.1016/j.jpcs.2009.12.016
Publication status	Published - 2010 Apr 1

Keywords

A. semiconductors
B. crystal growth
C. X-ray diffraction

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1016/j.jpcs.2009.12.016

Cite this

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title = "Carrier tuning of type-I clathrate single crystals",

abstract = "A method to precisely control the carrier properties for single crystalline type-I clathrate is investigated. Polycrystalline samples are synthesized first according to the theoretical ratio for carrier control, and followed by Ga flux single crystal growth process. The composition of single crystals was determined by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP), and the detailed structure was determined by using high-resolution X-ray diffraction. The carrier type and concentration can be tuned by changing the Ba/Ga composition for Ba8Ga16Ge30 (BGG), while only n-type carrier can be achieved in Sr8Ga16Ge30 (SGG). X-ray diffraction analysis shows that the different occupancy factors of the endohedral chemical species may be the reason for this carrier difference between BGG and SGG.",

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author = "Jun Tang and Zhaofei Li and Takuya Nishiro and Kazumi Sato and Katsumi Tanigaki",

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TY - JOUR

T1 - Carrier tuning of type-I clathrate single crystals

AU - Tang, Jun

AU - Li, Zhaofei

AU - Nishiro, Takuya

AU - Sato, Kazumi

AU - Tanigaki, Katsumi

PY - 2010/4/1

Y1 - 2010/4/1

N2 - A method to precisely control the carrier properties for single crystalline type-I clathrate is investigated. Polycrystalline samples are synthesized first according to the theoretical ratio for carrier control, and followed by Ga flux single crystal growth process. The composition of single crystals was determined by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP), and the detailed structure was determined by using high-resolution X-ray diffraction. The carrier type and concentration can be tuned by changing the Ba/Ga composition for Ba8Ga16Ge30 (BGG), while only n-type carrier can be achieved in Sr8Ga16Ge30 (SGG). X-ray diffraction analysis shows that the different occupancy factors of the endohedral chemical species may be the reason for this carrier difference between BGG and SGG.

AB - A method to precisely control the carrier properties for single crystalline type-I clathrate is investigated. Polycrystalline samples are synthesized first according to the theoretical ratio for carrier control, and followed by Ga flux single crystal growth process. The composition of single crystals was determined by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP), and the detailed structure was determined by using high-resolution X-ray diffraction. The carrier type and concentration can be tuned by changing the Ba/Ga composition for Ba8Ga16Ge30 (BGG), while only n-type carrier can be achieved in Sr8Ga16Ge30 (SGG). X-ray diffraction analysis shows that the different occupancy factors of the endohedral chemical species may be the reason for this carrier difference between BGG and SGG.

KW - A. semiconductors

KW - B. crystal growth

KW - C. X-ray diffraction

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Carrier tuning of type-I clathrate single crystals

Abstract

Keywords

ASJC Scopus subject areas

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