Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs

S. I. Kuroki, S. Fujii, Koji Kotani, Takashi Itoh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.

Original languageEnglish
Pages (from-to)1336-1338
Number of pages3
JournalElectronics Letters
Volume47
Issue number24
DOIs
Publication statusPublished - 2011 Nov 24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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