Abstract
Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.
| Original language | English |
|---|---|
| Pages (from-to) | 1336-1338 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 47 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2011 Nov 24 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs'. Together they form a unique fingerprint.
Cite this
Kuroki, S. I., Fujii, S., Kotani, K., & Itoh, T. (2011). Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs. Electronics Letters, 47(24), 1336-1338. https://doi.org/10.1049/el.2011.2854