Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs

S. I. Kuroki; S. Fujii; Koji Kotani; Takashi Itoh

doi:10.1049/el.2011.2854

Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs

S. I. Kuroki, S. Fujii, Koji Kotani, Takashi Itoh

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.

Original language	English
Pages (from-to)	1336-1338
Number of pages	3
Journal	Electronics Letters
Volume	47
Issue number	24
DOIs	https://doi.org/10.1049/el.2011.2854
Publication status	Published - 2011 Nov 24

ASJC Scopus subject areas

Electrical and Electronic Engineering

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abstract = "Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.",

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AU - Itoh, Takashi

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AB - Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.

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