Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs

S. I. Kuroki; S. Fujii; K. Kotani; T. Ito

doi:10.1049/el.2011.2854

Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs

S. I. Kuroki, S. Fujii, K. Kotani, T. Ito

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.

Original language	English
Pages (from-to)	1336-1338
Number of pages	3
Journal	Electronics Letters
Volume	47
Issue number	24
DOIs	https://doi.org/10.1049/el.2011.2854
Publication status	Published - 2011 Nov 24

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2011.2854

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abstract = "Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.",

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AU - Kuroki, S. I.

AU - Fujii, S.

AU - Kotani, K.

AU - Ito, T.

PY - 2011/11/24

Y1 - 2011/11/24

N2 - Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.

AB - Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.

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JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

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ER -

Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs

Abstract

ASJC Scopus subject areas

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