Abstract
Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.
Original language | English |
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Pages (from-to) | 1336-1338 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 47 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2011 Nov 24 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering