Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Joel Molina, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugir, Takeo Hattori, Hiroshi Iwai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Using a W-La2O3 gated MOSFET structure, we report the effect. of substrate and gale injection of electrons on the breakdown and electrical degradation characteristics of the gate stack. Using the carrier separation measurement technique, we are able to identify the major contributor to leakage current under various stress conditions. By stressing n- and p-channel MOSFKTs with positive and negative gate voltages respectively, the degradation (Vth shift) after stress is obtained and compared to the polarity of the applied stress.

Original languageEnglish
Pages (from-to)185-191
Number of pages7
JournalIEICE Electronics Express
Volume4
Issue number6
DOIs
Publication statusPublished - 2007 Mar 25
Externally publishedYes

Keywords

  • Carrier separation
  • LaO
  • MOSFET
  • PMA
  • Vth shift

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Molina, J., Kakushima, K., Ahmet, P., Tsutsui, K., Sugir, N., Hattori, T., & Iwai, H. (2007). Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress. IEICE Electronics Express, 4(6), 185-191. https://doi.org/10.1587/elex.4.185