Carrier recombination mechanism at SiO2/Si interface studied by a photo-thermal and a surface photo-voltage spectroscopy

T. Saisho, K. Sakai, H. Hayashi, S. Sato, A. Fukuyama, M. Suemitsu, T. Ikari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages414-415
Number of pages2
Publication statusPublished - 2005 Dec 1
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: 2005 Dec 72005 Dec 9

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
Country/TerritoryUnited States
CityBethesda, MD
Period05/12/705/12/9

ASJC Scopus subject areas

  • Engineering(all)

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