Carrier mobility in organic field-effect transistors

Yong Xu, Mohamed Benwadih, Romain Gwoziecki, Romain Coppard, Takeo Minari, Chuan Liu, Kazuhito Tsukagoshi, Jan Chroboczek, Francis Balestra, Gerard Ghibaudo

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)

Abstract

A study of carrier transport in top-gate and bottom-contact TIPS-pentacene organic field-effect transistors (OFETs) based on mobility is presented. Among three mobilities extracted by different methods, the low-field mobility obtained by the Y function exhibits the best reliability and ease for use, whereas the widely applied field-effect mobility is not reliable, particularly in short-channel transistors and at low temperatures. A detailed study of contact transport reveals its strong impact on short-channel transistors, suggesting that a more intrinsic transport analysis is better implemented in relatively longer-channel devices. The observed temperature dependences of mobility are well explained by a transport model with Gaussian-like diffusivity band tails, different from diffusion in localized states band tails. This model explicitly interprets the non-zero constant mobility at low temperatures and clearly demonstrates the effects of disorder and hopping transport on temperature and carrier density dependences of mobility in organic transistors.

Original languageEnglish
Article number104513
JournalJournal of Applied Physics
Volume110
Issue number10
DOIs
Publication statusPublished - 2011 Nov 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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