Carrier lifetime of low-temperature grown GaAs measured by pump-probe spectroscopy: Effect of arsenic pressure during MBE crystal growth

R. Yano; Y. Hirayama; S. Miyashita; H. Sasabu; H. Nakano; N. Uesugi; S. Uehara

Carrier lifetime of low-temperature grown GaAs measured by pump-probe spectroscopy: Effect of arsenic pressure during MBE crystal growth

R. Yano, Y. Hirayama, S. Miyashita, H. Sasabu, H. Nakano, N. Uesugi, S. Uehara

Research output: Contribution to conference › Paper › peer-review

Abstract

The measurement of carrier lifetime of low-temperature (LT) grown GaAs samples using pump-probe spectroscopy was presented. The As-grown LT-GaAs samples were grown by molecular beam epitaxy (MBE) at 250 °C and controlling As pressure by periodic opening and closing of the As shutter. It was found that As pressure has a shorter carrier lifetime than that grown at low As pressure for both as-grown and anneal conditions.

Original language	English
Pages	I440-I441
Publication status	Published - 2001 Dec 1
Externally published	Yes
Event	4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan Duration: 2001 Jul 15 → 2001 Jul 19

Other

Other	4th Pacific Rim Conference on Lasers and Electro-Optics
Country/Territory	Japan
City	Chiba
Period	01/7/15 → 01/7/19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Carrier lifetime of low-temperature grown GaAs measured by pump-probe spectroscopy : Effect of arsenic pressure during MBE crystal growth. / Yano, R.; Hirayama, Y.; Miyashita, S.; Sasabu, H.; Nakano, H.; Uesugi, N.; Uehara, S.

2001. I440-I441 Paper presented at 4th Pacific Rim Conference on Lasers and Electro-Optics, Chiba, Japan.

Research output: Contribution to conference › Paper › peer-review

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abstract = "The measurement of carrier lifetime of low-temperature (LT) grown GaAs samples using pump-probe spectroscopy was presented. The As-grown LT-GaAs samples were grown by molecular beam epitaxy (MBE) at 250 °C and controlling As pressure by periodic opening and closing of the As shutter. It was found that As pressure has a shorter carrier lifetime than that grown at low As pressure for both as-grown and anneal conditions.",

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T2 - 4th Pacific Rim Conference on Lasers and Electro-Optics

AU - Yano, R.

AU - Hirayama, Y.

AU - Miyashita, S.

AU - Sasabu, H.

AU - Nakano, H.

AU - Uesugi, N.

AU - Uehara, S.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The measurement of carrier lifetime of low-temperature (LT) grown GaAs samples using pump-probe spectroscopy was presented. The As-grown LT-GaAs samples were grown by molecular beam epitaxy (MBE) at 250 °C and controlling As pressure by periodic opening and closing of the As shutter. It was found that As pressure has a shorter carrier lifetime than that grown at low As pressure for both as-grown and anneal conditions.

AB - The measurement of carrier lifetime of low-temperature (LT) grown GaAs samples using pump-probe spectroscopy was presented. The As-grown LT-GaAs samples were grown by molecular beam epitaxy (MBE) at 250 °C and controlling As pressure by periodic opening and closing of the As shutter. It was found that As pressure has a shorter carrier lifetime than that grown at low As pressure for both as-grown and anneal conditions.

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M3 - Paper

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Y2 - 15 July 2001 through 19 July 2001

ER -

Carrier lifetime of low-temperature grown GaAs measured by pump-probe spectroscopy: Effect of arsenic pressure during MBE crystal growth

Abstract

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ASJC Scopus subject areas

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