Abstract
The measurement of carrier lifetime of low-temperature (LT) grown GaAs samples using pump-probe spectroscopy was presented. The As-grown LT-GaAs samples were grown by molecular beam epitaxy (MBE) at 250 °C and controlling As pressure by periodic opening and closing of the As shutter. It was found that As pressure has a shorter carrier lifetime than that grown at low As pressure for both as-grown and anneal conditions.
Original language | English |
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Pages | I440-I441 |
Publication status | Published - 2001 Dec 1 |
Externally published | Yes |
Event | 4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan Duration: 2001 Jul 15 → 2001 Jul 19 |
Other
Other | 4th Pacific Rim Conference on Lasers and Electro-Optics |
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Country/Territory | Japan |
City | Chiba |
Period | 01/7/15 → 01/7/19 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering