Carrier lifetime of low-temperature grown GaAs measured by pump-probe spectroscopy: Effect of arsenic pressure during MBE crystal growth

R. Yano, Y. Hirayama, S. Miyashita, H. Sasabu, H. Nakano, N. Uesugi, S. Uehara

Research output: Contribution to conferencePaperpeer-review

Abstract

The measurement of carrier lifetime of low-temperature (LT) grown GaAs samples using pump-probe spectroscopy was presented. The As-grown LT-GaAs samples were grown by molecular beam epitaxy (MBE) at 250 °C and controlling As pressure by periodic opening and closing of the As shutter. It was found that As pressure has a shorter carrier lifetime than that grown at low As pressure for both as-grown and anneal conditions.

Original languageEnglish
PagesI440-I441
Publication statusPublished - 2001 Dec 1
Externally publishedYes
Event4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
Duration: 2001 Jul 152001 Jul 19

Other

Other4th Pacific Rim Conference on Lasers and Electro-Optics
CountryJapan
CityChiba
Period01/7/1501/7/19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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