Carrier lifetime and electron spin relaxation time in (110)-oriented GaAsAlGaAs quantum-well micro-posts

Nobuhide Yokota, Kazuhiro Ikeda, Yoshitaka Nishizaki, Shinji Koh, Hitoshi Kawaguchi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Carrier lifetime and electron spin relaxation time in (110)-oriented GaAsAlGaAs quantum-well (QW) micro-posts are investigated by polarization- and time-resolved photoluminescence measurements. The long electron spin relaxation time in QWs on GaAs (110) is found to be preserved even when the sidewall boundaries with fast surface recombination are introduced and the carrier lifetime is drastically shortened. Rate equation analysis shows that spin-controlled vertical-cavity surface-emitting lasers with such (110)-QW micro-posts will exhibit faster switching of lasing circular polarizations than that we previously demonstrated. In particular, 20-GHz switching is expected with 0.5-μ posts.

Original languageEnglish
Article number5585707
Pages (from-to)1689-1691
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number22
DOIs
Publication statusPublished - 2010 Nov 12
Externally publishedYes

Keywords

  • (110)-oriented quantum wells (QWs)
  • Carrier lifetime
  • electron spin relaxation time
  • micro-posts
  • spin lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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