Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n+-i-p+-i-n+ structures

Y. X. Liu, P. Plotka, K. Suto, Yutaka Oyama, J. Nishizawa

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The I-V characteristics of GaAs n+-i-p+-i-n+ diode structures grown by MLE with source-drain distances from 500 A to 950 A have been measured at temperatures ranging from 77 K to 423 K. The analysis of experimental results indicates that the current flows over the static-induction-controlled potential barrier. On this basis, quantitative comparison with thermionic emission theory which assumes injection of ballistic electrons are made.

Original languageEnglish
Pages (from-to)195-197
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume44
Issue number1
DOIs
Publication statusPublished - 1997 Dec 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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