The I-V characteristics of GaAs n+-i-p+-i-n+ diode structures grown by MLE with source-drain distances from 500 A to 950 A have been measured at temperatures ranging from 77 K to 423 K. The analysis of experimental results indicates that the current flows over the static-induction-controlled potential barrier. On this basis, quantitative comparison with thermionic emission theory which assumes injection of ballistic electrons are made.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering