Carrier injection and scattering in atomically thin chalcogenides

Song Lin Li, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Atomically thin two-dimensional chalcogenides such as MoS2 monolayers are structurally ideal channel materials for the ultimate atomic electronics. However, a heavy thickness dependence of electrical performance is shown in these ultrathin materials, and the device performance normally degrades while exhibiting a low carrier mobility as compared with corresponding bulks, constituting a main hurdle for application in electronics. In this brief review, we summarize our recent work on electrode/channel contacts and carrier scattering mechanisms to address the origins of this adverse thickness dependence. Extrinsically, the Schottky barrier height increases at the electrode=channel contact area in thin channels owing to bandgap expansion caused by quantum confinement, which hinders carrier injection and degrades device performance. Intrinsically, thin channels tend to suffer from intensified Coulomb impurity scattering, resulting from the reduced interaction distance between interfacial impurities and channel carriers. Both factors are responsible for the adverse dependence of carrier mobility on channel thickness in two-dimensional semiconductors.

Original languageEnglish
Article number121011
Journaljournal of the physical society of japan
Issue number12
Publication statusPublished - 2015 Dec 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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