Carrier generation mechanism and effect of tantalum-doping in transparent conductive amorphous SnO2 thin films

Shoichiro Nakao, Yasushi Hirose, Tomoteru Fukumura, Tetsuya Hasegawa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigated the transport properties of amorphous undoped and Ta-doped SnO2 thin films grown on unheated glass substrates by pulsed laser deposition. Optimized films exhibited a resistivity of 2×10%3 Ω cm, carrier density (ne) of (1-2)×1020 cm%3, and were highly transparent in the visible region. Ta-doping had little effect on ne in amorphous films, in contrast to in crystalline phases. These results suggest that carrier electrons in amorphous SnO2 films originated from oxygen vacancies, similar to in In 2O3-based amorphous films.

Original languageEnglish
Article number05FX04
JournalJapanese journal of applied physics
Volume53
Issue number5 SPEC. ISSUE 1
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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