Carrier doping into SrFeO2 epitaxial thin films by Eu-substitution

Toshiya Matsuyama, Akira Chikamatsu, Yasushi Hirose, Tomoteru Fukumura, Tetsuya Hasegawa

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this study, we fabricated Eu-substituted SrFeO2 (Sr 1-xEuxFeO2; Eu:SrFeO2) epitaxial thin films with an infinite-layer structure via solid-phase reduction of Sr 1-xEuxFeO3-δ precursor films grown by pulsed laser deposition. The Eu:SrFeO2 (x = 0.10) film showed resistivity as low as ∼0.15Ωcm at room temperature, which is approximately four orders of magnitude lower than that of undoped SrFeO 2. Hall measurements confirmed that n-type (electron) carriers were responsible for the semiconductor-like electric conduction in Eu:SrFeO 2. We also observed a large negative magnetoresistance of 78% at 2K in the Eu:SrFeO2 (x = 0.10) film.

Original languageEnglish
Article number013001
JournalApplied Physics Express
Volume4
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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