In this study, we fabricated Eu-substituted SrFeO2 (Sr 1-xEuxFeO2; Eu:SrFeO2) epitaxial thin films with an infinite-layer structure via solid-phase reduction of Sr 1-xEuxFeO3-δ precursor films grown by pulsed laser deposition. The Eu:SrFeO2 (x = 0.10) film showed resistivity as low as ∼0.15Ωcm at room temperature, which is approximately four orders of magnitude lower than that of undoped SrFeO 2. Hall measurements confirmed that n-type (electron) carriers were responsible for the semiconductor-like electric conduction in Eu:SrFeO 2. We also observed a large negative magnetoresistance of 78% at 2K in the Eu:SrFeO2 (x = 0.10) film.
ASJC Scopus subject areas
- Physics and Astronomy(all)