TY - JOUR
T1 - Carrier doping into SrFeO2 epitaxial thin films by Eu-substitution
AU - Matsuyama, Toshiya
AU - Chikamatsu, Akira
AU - Hirose, Yasushi
AU - Fukumura, Tomoteru
AU - Hasegawa, Tetsuya
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/1
Y1 - 2011/1
N2 - In this study, we fabricated Eu-substituted SrFeO2 (Sr 1-xEuxFeO2; Eu:SrFeO2) epitaxial thin films with an infinite-layer structure via solid-phase reduction of Sr 1-xEuxFeO3-δ precursor films grown by pulsed laser deposition. The Eu:SrFeO2 (x = 0.10) film showed resistivity as low as ∼0.15Ωcm at room temperature, which is approximately four orders of magnitude lower than that of undoped SrFeO 2. Hall measurements confirmed that n-type (electron) carriers were responsible for the semiconductor-like electric conduction in Eu:SrFeO 2. We also observed a large negative magnetoresistance of 78% at 2K in the Eu:SrFeO2 (x = 0.10) film.
AB - In this study, we fabricated Eu-substituted SrFeO2 (Sr 1-xEuxFeO2; Eu:SrFeO2) epitaxial thin films with an infinite-layer structure via solid-phase reduction of Sr 1-xEuxFeO3-δ precursor films grown by pulsed laser deposition. The Eu:SrFeO2 (x = 0.10) film showed resistivity as low as ∼0.15Ωcm at room temperature, which is approximately four orders of magnitude lower than that of undoped SrFeO 2. Hall measurements confirmed that n-type (electron) carriers were responsible for the semiconductor-like electric conduction in Eu:SrFeO 2. We also observed a large negative magnetoresistance of 78% at 2K in the Eu:SrFeO2 (x = 0.10) film.
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U2 - 10.1143/APEX.4.013001
DO - 10.1143/APEX.4.013001
M3 - Article
AN - SCOPUS:79251573857
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 1
M1 - 013001
ER -