Carrier doping into SrFeO2 epitaxial thin films by Eu-substitution

Toshiya Matsuyama; Akira Chikamatsu; Yasushi Hirose; Tomoteru Fukumura; Tetsuya Hasegawa

doi:10.1143/APEX.4.013001

Carrier doping into SrFeO₂ epitaxial thin films by Eu-substitution

Toshiya Matsuyama, Akira Chikamatsu, Yasushi Hirose, Tomoteru Fukumura, Tetsuya Hasegawa

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In this study, we fabricated Eu-substituted SrFeO₂ (Sr _1-xEu_xFeO₂; Eu:SrFeO₂) epitaxial thin films with an infinite-layer structure via solid-phase reduction of Sr _1-xEu_xFeO_3-δ precursor films grown by pulsed laser deposition. The Eu:SrFeO₂ (x = 0.10) film showed resistivity as low as ∼0.15Ωcm at room temperature, which is approximately four orders of magnitude lower than that of undoped SrFeO ₂. Hall measurements confirmed that n-type (electron) carriers were responsible for the semiconductor-like electric conduction in Eu:SrFeO ₂. We also observed a large negative magnetoresistance of 78% at 2K in the Eu:SrFeO₂ (x = 0.10) film.

Original language	English
Article number	013001
Journal	Applied Physics Express
Volume	4
Issue number	1
DOIs	https://doi.org/10.1143/APEX.4.013001
Publication status	Published - 2011 Jan
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "In this study, we fabricated Eu-substituted SrFeO2 (Sr 1-xEuxFeO2; Eu:SrFeO2) epitaxial thin films with an infinite-layer structure via solid-phase reduction of Sr 1-xEuxFeO3-δ precursor films grown by pulsed laser deposition. The Eu:SrFeO2 (x = 0.10) film showed resistivity as low as ∼0.15Ωcm at room temperature, which is approximately four orders of magnitude lower than that of undoped SrFeO 2. Hall measurements confirmed that n-type (electron) carriers were responsible for the semiconductor-like electric conduction in Eu:SrFeO 2. We also observed a large negative magnetoresistance of 78% at 2K in the Eu:SrFeO2 (x = 0.10) film.",

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AU - Matsuyama, Toshiya

AU - Chikamatsu, Akira

AU - Hirose, Yasushi

AU - Fukumura, Tomoteru

AU - Hasegawa, Tetsuya

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AB - In this study, we fabricated Eu-substituted SrFeO2 (Sr 1-xEuxFeO2; Eu:SrFeO2) epitaxial thin films with an infinite-layer structure via solid-phase reduction of Sr 1-xEuxFeO3-δ precursor films grown by pulsed laser deposition. The Eu:SrFeO2 (x = 0.10) film showed resistivity as low as ∼0.15Ωcm at room temperature, which is approximately four orders of magnitude lower than that of undoped SrFeO 2. Hall measurements confirmed that n-type (electron) carriers were responsible for the semiconductor-like electric conduction in Eu:SrFeO 2. We also observed a large negative magnetoresistance of 78% at 2K in the Eu:SrFeO2 (x = 0.10) film.

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Carrier doping into SrFeO₂ epitaxial thin films by Eu-substitution

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