Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctions

Hideo Ohno, K. Matsuzaki, H. Tomozawa, J. K. Luo, H. Hasegawa

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Carrier concentration of a two dimensional electron gas, ns in n-AlGaAs/GaAs heterostructures is measured with varying the spacer layer thickness. Structures are designed to eliminate the effects of the charges at the surface and interface on ns. Thus obtained ns is shown to be in good agreement with calculation in which 65% of the band gap difference between AlGaAs and GaAs is assumed to appear in the conduction band.

Original languageEnglish
Pages (from-to)497-499
Number of pages3
JournalSurface Science
Volume228
Issue number1-3
DOIs
Publication statusPublished - 1990 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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