Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctions

Hideo Ohno; K. Matsuzaki; H. Tomozawa; J. K. Luo; H. Hasegawa

doi:10.1016/0039-6028(90)90362-C

Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctions

Hideo Ohno, K. Matsuzaki, H. Tomozawa, J. K. Luo, H. Hasegawa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Carrier concentration of a two dimensional electron gas, n_s in n-AlGaAs/GaAs heterostructures is measured with varying the spacer layer thickness. Structures are designed to eliminate the effects of the charges at the surface and interface on n_s. Thus obtained n_s is shown to be in good agreement with calculation in which 65% of the band gap difference between AlGaAs and GaAs is assumed to appear in the conduction band.

Original language	English
Pages (from-to)	497-499
Number of pages	3
Journal	Surface Science
Volume	228
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90362-C
Publication status	Published - 1990 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/0039-6028(90)90362-C

Cite this

@article{43f6b167aed84d94a80b086de197653f,

title = "Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctions",

abstract = "Carrier concentration of a two dimensional electron gas, ns in n-AlGaAs/GaAs heterostructures is measured with varying the spacer layer thickness. Structures are designed to eliminate the effects of the charges at the surface and interface on ns. Thus obtained ns is shown to be in good agreement with calculation in which 65% of the band gap difference between AlGaAs and GaAs is assumed to appear in the conduction band.",

author = "Hideo Ohno and K. Matsuzaki and H. Tomozawa and Luo, {J. K.} and H. Hasegawa",

year = "1990",

month = apr,

day = "1",

doi = "10.1016/0039-6028(90)90362-C",

language = "English",

volume = "228",

pages = "497--499",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctions

AU - Ohno, Hideo

AU - Matsuzaki, K.

AU - Tomozawa, H.

AU - Luo, J. K.

AU - Hasegawa, H.

PY - 1990/4/1

Y1 - 1990/4/1

N2 - Carrier concentration of a two dimensional electron gas, ns in n-AlGaAs/GaAs heterostructures is measured with varying the spacer layer thickness. Structures are designed to eliminate the effects of the charges at the surface and interface on ns. Thus obtained ns is shown to be in good agreement with calculation in which 65% of the band gap difference between AlGaAs and GaAs is assumed to appear in the conduction band.

AB - Carrier concentration of a two dimensional electron gas, ns in n-AlGaAs/GaAs heterostructures is measured with varying the spacer layer thickness. Structures are designed to eliminate the effects of the charges at the surface and interface on ns. Thus obtained ns is shown to be in good agreement with calculation in which 65% of the band gap difference between AlGaAs and GaAs is assumed to appear in the conduction band.

UR - http://www.scopus.com/inward/record.url?scp=44949286581&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949286581&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(90)90362-C

DO - 10.1016/0039-6028(90)90362-C

M3 - Article

AN - SCOPUS:44949286581

VL - 228

SP - 497

EP - 499

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -

Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this