Carrier compensation mechanism of highly conductive anatase Ti 0.94Nb0.06O2 epitaxial thin films

Hiroyuki Nogawa, Taro Hitosugi, Hideyuki Kamisaka, Kouichi Yamashita, Akira Chikamatsu, Kouhei Yoshimatsu, Hiroshi Kumigashira, Masaharu Oshima, Syoichiro Nadao, Yutaka Furubayashi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)


    We investigated electrical conduction of anatase Ti0.94Nb 0.06O2 (TNO) epitaxial thin films in relation to oxygen defects generated by post-annealing. Annealing of TNO in oxygen was found to cause dramatic decreases in ne. Resonant photoemission spectroscopy measurements revealed that a deep acceptor state just above the top of valence band evolves, synchronized with the decrease of ne. We proposed that the acceptor state originates from interstitial oxygen atoms combined with Nb dopants and compensates electron carriers.

    Original languageEnglish
    Title of host publicationSynthesis and Metrology of Nanoscale Oxides and Thin Films
    PublisherMaterials Research Society
    Number of pages5
    ISBN (Print)9781605608556
    Publication statusPublished - 2008
    Event2008 MRS Spring Meeting - San Francisco, CA, United States
    Duration: 2008 Mar 242008 Mar 28

    Publication series

    NameMaterials Research Society Symposium Proceedings
    ISSN (Print)0272-9172


    Other2008 MRS Spring Meeting
    Country/TerritoryUnited States
    CitySan Francisco, CA

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


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