TY - JOUR
T1 - Carbonaceous field effect transistor with graphene and diamondlike carbon
AU - Takabayashi, Susumu
AU - Ogawa, Shuichi
AU - Takakuwa, Yuji
AU - Kang, Hyun Chul
AU - Takahashi, Ryota
AU - Fukidome, Hirokazu
AU - Suemitsu, Maki
AU - Suemitsu, Tetsuya
AU - Otsuji, Taiichi
N1 - Funding Information:
This project is financially supported by JST-CREST . This research was partly performed at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.
PY - 2012/2
Y1 - 2012/2
N2 - A carbonaceous field effect transistor, designated as a 'DLC-GFET', consisting of a graphene channel and a diamondlike carbon (DLC) top-gate dielectric film was fabricated. A DLC film was formed 'directly' onto the graphene channel using our original photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD) without forming complex passivation interlayers. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral points (Dirac voltages). The Raman analysis suggests that the electrical characteristics are due to unintentional hole doping from the DLC film into the graphene channel. The maximum transconductances per unit device width in the n-channel and the p-channel modes (g mn,max and g mp,max) are 14.6 mS/mm and 8.8 mS/mm, respectively, with a gate thickness of 48 nm and a gate length of 5 μm. Formation of the DLC top-gate does not cause obvious damage to the graphene channel. Hence, the PA-CVD method is suitable to form gate dielectrics onto graphene.
AB - A carbonaceous field effect transistor, designated as a 'DLC-GFET', consisting of a graphene channel and a diamondlike carbon (DLC) top-gate dielectric film was fabricated. A DLC film was formed 'directly' onto the graphene channel using our original photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD) without forming complex passivation interlayers. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral points (Dirac voltages). The Raman analysis suggests that the electrical characteristics are due to unintentional hole doping from the DLC film into the graphene channel. The maximum transconductances per unit device width in the n-channel and the p-channel modes (g mn,max and g mp,max) are 14.6 mS/mm and 8.8 mS/mm, respectively, with a gate thickness of 48 nm and a gate length of 5 μm. Formation of the DLC top-gate does not cause obvious damage to the graphene channel. Hence, the PA-CVD method is suitable to form gate dielectrics onto graphene.
KW - Diamondlike carbon (DLC)
KW - Field effect transistor (FET)
KW - Graphene
KW - Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD)
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U2 - 10.1016/j.diamond.2011.12.037
DO - 10.1016/j.diamond.2011.12.037
M3 - Article
AN - SCOPUS:84856007244
VL - 22
SP - 118
EP - 123
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
ER -