Carbon interlayer between CVD SiC and SiO2 in high-temperature passive oxidation

Hirokazu Katsui, Miyuki Oguma, Takashi Goto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The oxidation behavior of high-purity silicon carbide (SiC) prepared by chemical vapor deposition was investigated by thermogravimetry, transmission electron microscopy, and Raman spectroscopy in the temperature range 1534-1902 K in pure O2. The carbon layer formed at the SiC/SiO2 interface upon oxidation above 1784 K. Raman peaks corresponding to D- and G-bands could be identified from the carbon layer. Bubbles were observed in the SiO2 scale after the oxidation at 1873 K. This could be attributed to the accumulation of CO gas at the SiC/SiO2 interface, resulting in the formation of the carbon layer and bubbles. These suggest that the oxidation rate of SiC is limited by the outward diffusion of CO in the SiO2 scale in this temperature range.

Original languageEnglish
Pages (from-to)1633-1637
Number of pages5
JournalJournal of the American Ceramic Society
Volume97
Issue number5
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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