Abstract
Carbon effect on strain compensation in Si1-x -yGexCy films epitaxially grown on Si(100) at 500 °C has been investigated using an ultraclean hot-wall low-pressure chemical vapor deposition. The introduction of C into thin strained Si1-xGex films reduces the average lattice constant. On the other hand, results of the Raman scattering measurement show that C incorporation scarcely affects on local strain of Si-Si, Si-Ge and Ge-Ge bonds. The critical thickness at which the Raman shift peak begins to be decreased tends to become larger for the higher C fraction. It is considered that the C introduction effectively increases the critical thickness by relieving the overall strain.
Original language | English |
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Pages (from-to) | 140-142 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 508 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2006 Jun 5 |
Keywords
- Carbon
- Chemical vapor deposition
- Raman scattering
- SiGe
- Strain
- X-ray diffraction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry