Carbon effect on strain compensation in Si1-x -yGexCy films epitaxially grown on Si(100)

Hiroaki Nitta; Junichi Tanabe; Masao Sakuraba; Junichi Murota

doi:10.1016/j.tsf.2005.06.105

Carbon effect on strain compensation in Si_{1-x -y}Ge_xC_y films epitaxially grown on Si(100)

Hiroaki Nitta, Junichi Tanabe, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Carbon effect on strain compensation in Si_{1-x -y}Ge_xC_y films epitaxially grown on Si(100) at 500 °C has been investigated using an ultraclean hot-wall low-pressure chemical vapor deposition. The introduction of C into thin strained Si_1-xGe_x films reduces the average lattice constant. On the other hand, results of the Raman scattering measurement show that C incorporation scarcely affects on local strain of Si-Si, Si-Ge and Ge-Ge bonds. The critical thickness at which the Raman shift peak begins to be decreased tends to become larger for the higher C fraction. It is considered that the C introduction effectively increases the critical thickness by relieving the overall strain.

Original language	English
Pages (from-to)	140-142
Number of pages	3
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.06.105
Publication status	Published - 2006 Jun 5

Keywords

Carbon
Chemical vapor deposition
Raman scattering
SiGe
Strain
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2005.06.105

Cite this

@article{869b0092d5884b9b9b86440dbe766342,

title = "Carbon effect on strain compensation in Si1-x -yGexCy films epitaxially grown on Si(100)",

abstract = "Carbon effect on strain compensation in Si1-x -yGexCy films epitaxially grown on Si(100) at 500 °C has been investigated using an ultraclean hot-wall low-pressure chemical vapor deposition. The introduction of C into thin strained Si1-xGex films reduces the average lattice constant. On the other hand, results of the Raman scattering measurement show that C incorporation scarcely affects on local strain of Si-Si, Si-Ge and Ge-Ge bonds. The critical thickness at which the Raman shift peak begins to be decreased tends to become larger for the higher C fraction. It is considered that the C introduction effectively increases the critical thickness by relieving the overall strain.",

keywords = "Carbon, Chemical vapor deposition, Raman scattering, SiGe, Strain, X-ray diffraction",

author = "Hiroaki Nitta and Junichi Tanabe and Masao Sakuraba and Junichi Murota",

note = "Funding Information: This study was partially supported by a Grant-in-Aid for scientific research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2006",

month = jun,

day = "5",

doi = "10.1016/j.tsf.2005.06.105",

language = "English",

volume = "508",

pages = "140--142",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Carbon effect on strain compensation in Si1-x -yGexCy films epitaxially grown on Si(100)

AU - Nitta, Hiroaki

AU - Tanabe, Junichi

AU - Sakuraba, Masao

AU - Murota, Junichi

N1 - Funding Information: This study was partially supported by a Grant-in-Aid for scientific research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2006/6/5

Y1 - 2006/6/5

N2 - Carbon effect on strain compensation in Si1-x -yGexCy films epitaxially grown on Si(100) at 500 °C has been investigated using an ultraclean hot-wall low-pressure chemical vapor deposition. The introduction of C into thin strained Si1-xGex films reduces the average lattice constant. On the other hand, results of the Raman scattering measurement show that C incorporation scarcely affects on local strain of Si-Si, Si-Ge and Ge-Ge bonds. The critical thickness at which the Raman shift peak begins to be decreased tends to become larger for the higher C fraction. It is considered that the C introduction effectively increases the critical thickness by relieving the overall strain.

AB - Carbon effect on strain compensation in Si1-x -yGexCy films epitaxially grown on Si(100) at 500 °C has been investigated using an ultraclean hot-wall low-pressure chemical vapor deposition. The introduction of C into thin strained Si1-xGex films reduces the average lattice constant. On the other hand, results of the Raman scattering measurement show that C incorporation scarcely affects on local strain of Si-Si, Si-Ge and Ge-Ge bonds. The critical thickness at which the Raman shift peak begins to be decreased tends to become larger for the higher C fraction. It is considered that the C introduction effectively increases the critical thickness by relieving the overall strain.

KW - Carbon

KW - Chemical vapor deposition

KW - Raman scattering

KW - SiGe

KW - Strain

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=33646113843&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646113843&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.06.105

DO - 10.1016/j.tsf.2005.06.105

M3 - Article

AN - SCOPUS:33646113843

VL - 508

SP - 140

EP - 142

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -