Carbon effect on strain compensation in Si1-x -yGexCy films epitaxially grown on Si(100)

Hiroaki Nitta, Junichi Tanabe, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Carbon effect on strain compensation in Si1-x -yGexCy films epitaxially grown on Si(100) at 500 °C has been investigated using an ultraclean hot-wall low-pressure chemical vapor deposition. The introduction of C into thin strained Si1-xGex films reduces the average lattice constant. On the other hand, results of the Raman scattering measurement show that C incorporation scarcely affects on local strain of Si-Si, Si-Ge and Ge-Ge bonds. The critical thickness at which the Raman shift peak begins to be decreased tends to become larger for the higher C fraction. It is considered that the C introduction effectively increases the critical thickness by relieving the overall strain.

Original languageEnglish
Pages (from-to)140-142
Number of pages3
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

Keywords

  • Carbon
  • Chemical vapor deposition
  • Raman scattering
  • SiGe
  • Strain
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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