Carbon doping effect on strain relaxation during Si1-x-yGe xCy epitaxial growth on Si(100) at 500°C

Hiroaki Nitta; Masao Sakuraba; Junichi Murota

Carbon doping effect on strain relaxation during Si_1-x-yGe _xC_y epitaxial growth on Si(100) at 500°C

Hiroaki Nitta, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Publication status	Published - 2006 Dec 1
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: 2006 May 15 → 2006 May 17

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Other

Other	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country/Territory	United States
City	Princeton, NJ
Period	06/5/15 → 06/5/17

ASJC Scopus subject areas

Computer Science(all)
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

Carbon doping effect on strain relaxation during Si_1-x-yGe _xC_y epitaxial growth on Si(100) at 500°C. / Nitta, Hiroaki; Sakuraba, Masao; Murota, Junichi.

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715980 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nitta, H, Sakuraba, M & Murota, J 2006, Carbon doping effect on strain relaxation during Si_1-x-yGe _xC_y epitaxial growth on Si(100) at 500°C. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1715980, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 06/5/15.

@inproceedings{64bbc760fb394dfcb8443d672a4b4953,

title = "Carbon doping effect on strain relaxation during Si1-x-yGe xCy epitaxial growth on Si(100) at 500°C",

author = "Hiroaki Nitta and Masao Sakuraba and Junichi Murota",

year = "2006",

month = dec,

day = "1",

language = "English",

isbn = "1424404614",

series = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

booktitle = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

note = "Third International SiGe Technology and Device Meeting, ISTDM 2006 ; Conference date: 15-05-2006 Through 17-05-2006",

}

TY - GEN

T1 - Carbon doping effect on strain relaxation during Si1-x-yGe xCy epitaxial growth on Si(100) at 500°C

AU - Nitta, Hiroaki

AU - Sakuraba, Masao

AU - Murota, Junichi

PY - 2006/12/1

Y1 - 2006/12/1

UR - http://www.scopus.com/inward/record.url?scp=34247539991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247539991&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:34247539991

SN - 1424404614

SN - 9781424404612

T3 - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

BT - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

T2 - Third International SiGe Technology and Device Meeting, ISTDM 2006

Y2 - 15 May 2006 through 17 May 2006