@inproceedings{64bbc760fb394dfcb8443d672a4b4953,
title = "Carbon doping effect on strain relaxation during Si1-x-yGe xCy epitaxial growth on Si(100) at 500°C",
author = "Hiroaki Nitta and Masao Sakuraba and Junichi Murota",
year = "2006",
month = dec,
day = "1",
language = "English",
isbn = "1424404614",
series = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",
booktitle = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",
note = "Third International SiGe Technology and Device Meeting, ISTDM 2006 ; Conference date: 15-05-2006 Through 17-05-2006",
}