Carbon doping effect on strain relaxation during Si1-x-yGe xCy epitaxial growth on Si(100) at 500°C

Hiroaki Nitta; Masao Sakuraba; Junichi Murota

Carbon doping effect on strain relaxation during Si_1-x-yGe _xC_y epitaxial growth on Si(100) at 500°C

Hiroaki Nitta, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Publication status	Published - 2006 Dec 1
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: 2006 May 15 → 2006 May 17

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Other

Other	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country	United States
City	Princeton, NJ
Period	06/5/15 → 06/5/17

ASJC Scopus subject areas

Computer Science(all)
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

Carbon doping effect on strain relaxation during Si_1-x-yGe _xC_y epitaxial growth on Si(100) at 500°C. / Nitta, Hiroaki; Sakuraba, Masao; Murota, Junichi.

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715980 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nitta, H, Sakuraba, M & Murota, J 2006, Carbon doping effect on strain relaxation during Si_1-x-yGe _xC_y epitaxial growth on Si(100) at 500°C. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1715980, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 06/5/15.

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