Abstract
On strain relaxation during Si1-x- yGexCy epitaxial growth on Si(1 0 0) using an ultraclean hot-wall low-pressure chemical vapour deposition system at 500 °C, the carbon doping effect has been investigated. The depth profile of the strain in Si1-x-yGe xCy films is measured by x-ray diffraction and Raman scattering spectroscopy combined with a wet etching technique. It is confirmed that the strain relaxation of Si1-xGex films (x ≤ 0.45) occurs uniformly at every depth from the surface to the heterointerface. On the other hand, strain relaxation occurs partially in the surface part of Si1-x-yGe xCy films (x ≤ 0.45, y ≤ 0.016), although the bottom part near the heterointerface is still strained.
| Original language | English |
|---|---|
| Article number | S02 |
| Journal | Semiconductor Science and Technology |
| Volume | 22 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2007 Jan 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Nitta, H., Sakuraba, M., & Murota, J. (2007). Carbon doping effect on strain relaxation during Si1- x-yGexCy epitaxial growth on Si(1 0 0) at 500 °c. Semiconductor Science and Technology, 22(1), [S02]. https://doi.org/10.1088/0268-1242/22/1/S02