Carbon doping effect on strain relaxation during Si1- x-yGexCy epitaxial growth on Si(1 0 0) at 500 °c

Hiroaki Nitta, Masao Sakuraba, Junichi Murota

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2 Citations (Scopus)


On strain relaxation during Si1-x- yGexCy epitaxial growth on Si(1 0 0) using an ultraclean hot-wall low-pressure chemical vapour deposition system at 500 °C, the carbon doping effect has been investigated. The depth profile of the strain in Si1-x-yGe xCy films is measured by x-ray diffraction and Raman scattering spectroscopy combined with a wet etching technique. It is confirmed that the strain relaxation of Si1-xGex films (x ≤ 0.45) occurs uniformly at every depth from the surface to the heterointerface. On the other hand, strain relaxation occurs partially in the surface part of Si1-x-yGe xCy films (x ≤ 0.45, y ≤ 0.016), although the bottom part near the heterointerface is still strained.

Original languageEnglish
Article numberS02
JournalSemiconductor Science and Technology
Issue number1
Publication statusPublished - 2007 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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