Carbon doping effect on strain relaxation during Si1- x-yGexCy epitaxial growth on Si(1 0 0) at 500 °c

Hiroaki Nitta; Masao Sakuraba; Junichi Murota

doi:10.1088/0268-1242/22/1/S02

Carbon doping effect on strain relaxation during Si_1- _x-yGe_xC_y epitaxial growth on Si(1 0 0) at 500 °c

Hiroaki Nitta, Masao Sakuraba, Junichi Murota

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

On strain relaxation during Si_1-x- _yGe_xC_y epitaxial growth on Si(1 0 0) using an ultraclean hot-wall low-pressure chemical vapour deposition system at 500 °C, the carbon doping effect has been investigated. The depth profile of the strain in Si_1-x-yGe _xC_y films is measured by x-ray diffraction and Raman scattering spectroscopy combined with a wet etching technique. It is confirmed that the strain relaxation of Si_1-xGe_x films (x ≤ 0.45) occurs uniformly at every depth from the surface to the heterointerface. On the other hand, strain relaxation occurs partially in the surface part of Si_1-x-yGe _xC_y films (x ≤ 0.45, y ≤ 0.016), although the bottom part near the heterointerface is still strained.

Original language	English
Article number	S02
Journal	Semiconductor Science and Technology
Volume	22
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/22/1/S02
Publication status	Published - 2007 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/22/1/S02

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title = "Carbon doping effect on strain relaxation during Si1- x-yGexCy epitaxial growth on Si(1 0 0) at 500 °c",

abstract = "On strain relaxation during Si1-x- yGexCy epitaxial growth on Si(1 0 0) using an ultraclean hot-wall low-pressure chemical vapour deposition system at 500 °C, the carbon doping effect has been investigated. The depth profile of the strain in Si1-x-yGe xCy films is measured by x-ray diffraction and Raman scattering spectroscopy combined with a wet etching technique. It is confirmed that the strain relaxation of Si1-xGex films (x ≤ 0.45) occurs uniformly at every depth from the surface to the heterointerface. On the other hand, strain relaxation occurs partially in the surface part of Si1-x-yGe xCy films (x ≤ 0.45, y ≤ 0.016), although the bottom part near the heterointerface is still strained.",

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T1 - Carbon doping effect on strain relaxation during Si1- x-yGexCy epitaxial growth on Si(1 0 0) at 500 °c

AU - Nitta, Hiroaki

AU - Sakuraba, Masao

AU - Murota, Junichi

PY - 2007/1/1

Y1 - 2007/1/1

N2 - On strain relaxation during Si1-x- yGexCy epitaxial growth on Si(1 0 0) using an ultraclean hot-wall low-pressure chemical vapour deposition system at 500 °C, the carbon doping effect has been investigated. The depth profile of the strain in Si1-x-yGe xCy films is measured by x-ray diffraction and Raman scattering spectroscopy combined with a wet etching technique. It is confirmed that the strain relaxation of Si1-xGex films (x ≤ 0.45) occurs uniformly at every depth from the surface to the heterointerface. On the other hand, strain relaxation occurs partially in the surface part of Si1-x-yGe xCy films (x ≤ 0.45, y ≤ 0.016), although the bottom part near the heterointerface is still strained.

AB - On strain relaxation during Si1-x- yGexCy epitaxial growth on Si(1 0 0) using an ultraclean hot-wall low-pressure chemical vapour deposition system at 500 °C, the carbon doping effect has been investigated. The depth profile of the strain in Si1-x-yGe xCy films is measured by x-ray diffraction and Raman scattering spectroscopy combined with a wet etching technique. It is confirmed that the strain relaxation of Si1-xGex films (x ≤ 0.45) occurs uniformly at every depth from the surface to the heterointerface. On the other hand, strain relaxation occurs partially in the surface part of Si1-x-yGe xCy films (x ≤ 0.45, y ≤ 0.016), although the bottom part near the heterointerface is still strained.

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Carbon doping effect on strain relaxation during Si_1- _x-yGe_xC_y epitaxial growth on Si(1 0 0) at 500 °c

Abstract

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