Capture/emission processes of carriers in heterointerface traps observed in the transient charge-pumping characteristics of SiGe/Si-hetero-channel pMOSFETs

Toshiaki Tsuchiya, Keiichi Yoshida, Masao Sakuraba, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transient phenomena related to carrier capture/emission processes in interface traps were observed in the the charge pumping (CP) characteristics of SiGe/Si hetero-channel pMOSFETs, i.e., the CP characteristics were found to depend on the on/off time of the gate pulse. From these observations, time constants for the processes both in SiGe/Si heterointerface traps and in gate-oxide interface traps were derived. The time constant is considered to depend on the energy level of the interface traps that are present over a wide range within the energy gap. Therefore, these phenomena provide an interesting way of evaluating the discrete energy levels of interface traps in nanometer-scale devices containing only a few traps.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
PublisherTrans Tech Publications Ltd
Pages201-206
Number of pages6
ISBN (Print)9783037850510
DOIs
Publication statusPublished - 2011

Publication series

NameKey Engineering Materials
Volume470
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Keywords

  • Carrier capture process
  • Charge pumping
  • Heterointerface trap
  • MOSFET

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Capture/emission processes of carriers in heterointerface traps observed in the transient charge-pumping characteristics of SiGe/Si-hetero-channel pMOSFETs'. Together they form a unique fingerprint.

Cite this