Capacitive silicon resonator structure with movable electrodes to reduce capacitive gap widths based on electrostatic parallel plate actuation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents the design and fabrication of a capacitive silicon resonator with movable electrodes to obtain smaller capacitive gap widths, which results in smaller motional resistance and lower insertion loss. It also helps to increase the tuning frequency range for the compensation of temperature drift of the silicon resonator. The resonant frequency of the fabricated device with a length of 500 μm, width of 440 μm and thickness of 5 μm is observed at 9.65 MHz, and the quality factor is 49,000. Using electrostatically-drived movable electrode structure, it is shown that the motional resistance is reduced by 200 times, the output signal (insertion loss) is improved by 21 dB and the tuning characteristic of the frequency is 7 times larger than those of the structures without movable electrode structures.

Original languageEnglish
Title of host publicationMEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1245-1248
Number of pages4
ISBN (Print)9781479935086
DOIs
Publication statusPublished - 2014 Jan 1
Event27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014 - San Francisco, CA, United States
Duration: 2014 Jan 262014 Jan 30

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)1084-6999

Other

Other27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014
CountryUnited States
CitySan Francisco, CA
Period14/1/2614/1/30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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