Abstract
The miscible region of InGaAlBN quinary system was simulated by using the strictly-regular-solution approximation. The interaction parameter to obtain excess enthalpies caused by mixing was calculated using the delta-lattice- parameter model. The results show that the miscible regions of the InGaAlBN are located near the InN-rich region, near BN, and near the line connecting GaN to AlN. This means that InGaAlBN quinary system makes it possible to design infrared optical devices with InN or In-rich InGaN as an active layer without any strain, which shortens device lifetime. InGaAlBN devices could possibly outperform the InGaAsP devices presently used in optical communications systems.
Original language | English |
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Pages (from-to) | L574-L576 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 46 |
Issue number | 20-24 |
DOIs | |
Publication status | Published - 2007 Jun 15 |
Keywords
- InN
- Miscible region
- Nitride semiconductor alloy
- The strictly-regular-solution model
- Uncooled laser
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)