Abstract
The miscible region of InGaAlBN quinary system was simulated by using the strictly-regular-solution approximation. The interaction parameter to obtain excess enthalpies caused by mixing was calculated using the delta-lattice- parameter model. The results show that the miscible regions of the InGaAlBN are located near the InN-rich region, near BN, and near the line connecting GaN to AlN. This means that InGaAlBN quinary system makes it possible to design infrared optical devices with InN or In-rich InGaN as an active layer without any strain, which shortens device lifetime. InGaAlBN devices could possibly outperform the InGaAsP devices presently used in optical communications systems.
| Original language | English |
|---|---|
| Pages (from-to) | L574-L576 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 46 |
| Issue number | 20-24 |
| DOIs | |
| Publication status | Published - 2007 Jun 15 |
Keywords
- InN
- Miscible region
- Nitride semiconductor alloy
- The strictly-regular-solution model
- Uncooled laser
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Kimura, T., & Matsuoka, T. (2007). Calculation of phase separation in wurtzite Ini1-x-y-zGa xAlyBzN. Japanese Journal of Applied Physics, Part 2: Letters, 46(20-24), L574-L576. https://doi.org/10.1143/JJAP.46.L574