Calculation of phase separation in wurtzite Ini1-x-y-zGa xAlyBzN

Takeshi Kimura, Takashi Matsuoka

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The miscible region of InGaAlBN quinary system was simulated by using the strictly-regular-solution approximation. The interaction parameter to obtain excess enthalpies caused by mixing was calculated using the delta-lattice- parameter model. The results show that the miscible regions of the InGaAlBN are located near the InN-rich region, near BN, and near the line connecting GaN to AlN. This means that InGaAlBN quinary system makes it possible to design infrared optical devices with InN or In-rich InGaN as an active layer without any strain, which shortens device lifetime. InGaAlBN devices could possibly outperform the InGaAsP devices presently used in optical communications systems.

Original languageEnglish
Pages (from-to)L574-L576
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number20-24
Publication statusPublished - 2007 Jun 15


  • InN
  • Miscible region
  • Nitride semiconductor alloy
  • The strictly-regular-solution model
  • Uncooled laser

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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