Abstract
We propose novel ultrasmall metal-oxide-semiconductor (MOS) transistors with double-potential barriers. The structure is similar to the lightly doped drain (LDD) MOS transistors with upper and lower gates. The double-potential barriers, which are controlled by the upper gate voltage, are formed under the side wall spacers. It is confirmed by simulation that the tunneling current through the double-potential barriers is larger than the thermally excited current at 77 K. Then, the Coulomb blockade effects, i.e., the suppression of the tunneling current in the vicinity of the zero drain voltage and the Coulomb oscillation, are observable at 77 K.
| Original language | English |
|---|---|
| Pages (from-to) | 399-402 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 38 |
| Issue number | 1 B |
| DOIs | |
| Publication status | Published - 1999 Jan 1 |
| Event | Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan Duration: 1998 May 31 → 1998 Jun 4 |
Keywords
- Coulomb blockade
- Coulomb oscillation
- Double-depletion-layer barriers
- Thermally excited current
- Tunneling current
- Ultrasmall mos transistor
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Hatano, T., Nomura, A., Yoshida, M., Nakajima, A., Shibahara, K., & Yokoyama, S. (1999). Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(1 B), 399-402. https://doi.org/10.1143/JJAP.38.399