C60 single crystal films on GaAs/InAs(001) surfaces

Qikun Xue, T. Ogino, Y. Hasegawa, T. Hashizume, H. Shinohara, T. Sakurai

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    In this paper, we report a scanning tunnelling microscopy study of C60 thin film growth on the GaAs(001) As-rich 2 × 6 and InAs(001) In-rich 4 × 2 surfaces prepared by molecular beam epitaxy. On the 2 × 6-As surface, the corrugated potential of the 2 × 6 substrate forces the first monolayer structure to be strongly modified resulting in formation of a 'double-chain' commensurate structure. C60-substrate interaction, however, is limited to 2-3 monolayers at the interface and the competing intermolecular interaction governs the 3-dimensional growth of multiple-layer C60 FCC crystalline firm on the InAs(001). In 4 × 2 surface, the C60 molecule is very mobile even at room temperature. The intermolecular interaction is significant and overcomes the substrate corrugated potential, and 2-dimensional islands with quasi-hexagonal close-packing form even at submonolayer coverage.

    Original languageEnglish
    Pages (from-to)27-33
    Number of pages7
    JournalMaterials Science and Engineering A
    Volume217-218
    DOIs
    Publication statusPublished - 1996 Oct 30

    Keywords

    • C60 single crystal films
    • GaAs(001)
    • InAs(001)

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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  • Cite this

    Xue, Q., Ogino, T., Hasegawa, Y., Hashizume, T., Shinohara, H., & Sakurai, T. (1996). C60 single crystal films on GaAs/InAs(001) surfaces. Materials Science and Engineering A, 217-218, 27-33. https://doi.org/10.1016/S0921-5093(96)10311-7