C60 single crystal films on GaAs(001) surfaces

Qikun Xue, Y. Ling, T. Ogino, T. Sakata, Y. Hasegawa, T. Hashizume, H. Shinohara, T. Sakurai

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

We report on a scanning tunnelling microscopy (STM) study, with different C60 thin-film growth orientations, on As-rich 2×6 and 2×4 surfaces of GaAs(001) prepared by molecular beam epitaxy. On the 2×6 As surface, the corrugated potential of the 2×6 substrate forces the first monolayer to be strongly modified, resulting in the formation of a 'double-chain' commensurate structure. C60-substrate interaction, however, is limited to 2 or 3 monolayers from the interface and a competing intermolecular interaction governs the 3-dimensional growth of multiple-layer C60 FCC crystalline film. Even though both surfaces have similar strongly corrugated potentials, an unusual (110)-oriented C60 thin crystalline film grows on the 2×4 β phase. This novel growth can be understood in terms of a site-specific interaction between the substrate and the molecule and the interplay of the competing intermolecular interactions.

Original languageEnglish
Pages (from-to)618-623
Number of pages6
JournalThin Solid Films
Volume281-282
Issue number1-2
DOIs
Publication statusPublished - 1996 Aug 1
Externally publishedYes

Keywords

  • Gallium arsenide
  • Growth
  • Scanning tunnelling microscopy (STM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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