Abstract
We report on a scanning tunnelling microscopy (STM) study, with different C60 thin-film growth orientations, on As-rich 2×6 and 2×4 surfaces of GaAs(001) prepared by molecular beam epitaxy. On the 2×6 As surface, the corrugated potential of the 2×6 substrate forces the first monolayer to be strongly modified, resulting in the formation of a 'double-chain' commensurate structure. C60-substrate interaction, however, is limited to 2 or 3 monolayers from the interface and a competing intermolecular interaction governs the 3-dimensional growth of multiple-layer C60 FCC crystalline film. Even though both surfaces have similar strongly corrugated potentials, an unusual (110)-oriented C60 thin crystalline film grows on the 2×4 β phase. This novel growth can be understood in terms of a site-specific interaction between the substrate and the molecule and the interplay of the competing intermolecular interactions.
Original language | English |
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Pages (from-to) | 618-623 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 281-282 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1996 Aug 1 |
Externally published | Yes |
Keywords
- Gallium arsenide
- Growth
- Scanning tunnelling microscopy (STM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry