C60 single crystal films on GaAs(001) surfaces

Qikun Xue, Y. Ling, T. Ogino, T. Sakata, Y. Hasegawa, T. Hashizume, H. Shinohara, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    21 Citations (Scopus)

    Abstract

    We report on a scanning tunnelling microscopy (STM) study, with different C60 thin-film growth orientations, on As-rich 2×6 and 2×4 surfaces of GaAs(001) prepared by molecular beam epitaxy. On the 2×6 As surface, the corrugated potential of the 2×6 substrate forces the first monolayer to be strongly modified, resulting in the formation of a 'double-chain' commensurate structure. C60-substrate interaction, however, is limited to 2 or 3 monolayers from the interface and a competing intermolecular interaction governs the 3-dimensional growth of multiple-layer C60 FCC crystalline film. Even though both surfaces have similar strongly corrugated potentials, an unusual (110)-oriented C60 thin crystalline film grows on the 2×4 β phase. This novel growth can be understood in terms of a site-specific interaction between the substrate and the molecule and the interplay of the competing intermolecular interactions.

    Original languageEnglish
    Pages (from-to)618-623
    Number of pages6
    JournalThin Solid Films
    Volume281-282
    Issue number1-2
    DOIs
    Publication statusPublished - 1996 Aug 1

    Keywords

    • Gallium arsenide
    • Growth
    • Scanning tunnelling microscopy (STM)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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