C atomic order doping at Si/Si1-xGex/Si heterointerface and improvement of thermal stability

Kazuya Takahashi, Toshihiro Kobayashi, Masao Sakuraba, Junichi Murota

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

Formation of Si/Si0.5Ge0.5/Si(100) epitaxial heterostructure by low pressure chemical vapor deposition and effect of the atomic layer order doping of C on thermal stability are investigated. The intermixing between Si and Ge during heat treatment at 700-750°C is scarcely suppressed by the continuously C doped Si/Si0.5Ge0.5(C)(C fraction 0.006)/Si heterostructure. On the other hand, atomic layer order C delta doping at the heterointerfaces effectively suppresses the intermixing even for the C atomic amount of 1.6×1013 cm-2.

Original languageEnglish
Pages915-922
Number of pages8
Publication statusPublished - 2004 Dec 1
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • Engineering(all)

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