C atomic order doping at Si/Si1-xGex/Si heterointerface and improvement of thermal stability

Kazuya Takahashi; Toshihiro Kobayashi; Masao Sakuraba; Junichi Murota

C atomic order doping at Si/Si_1-xGe_x/Si heterointerface and improvement of thermal stability

Kazuya Takahashi, Toshihiro Kobayashi, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

Formation of Si/Si_0.5Ge_0.5/Si(100) epitaxial heterostructure by low pressure chemical vapor deposition and effect of the atomic layer order doping of C on thermal stability are investigated. The intermixing between Si and Ge during heat treatment at 700-750°C is scarcely suppressed by the continuously C doped Si/Si_0.5Ge_0.5(C)(C fraction 0.006)/Si heterostructure. On the other hand, atomic layer order C delta doping at the heterointerfaces effectively suppresses the intermixing even for the C atomic amount of 1.6×10¹³ cm^-2.

Original language	English
Pages	915-922
Number of pages	8
Publication status	Published - 2004 Dec 1
Event	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8

Other

Other	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
Country	United States
City	Honolulu, HI
Period	04/10/3 → 04/10/8

ASJC Scopus subject areas

Engineering(all)

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C atomic order doping at Si/Si_1-xGe_x/Si heterointerface and improvement of thermal stability. / Takahashi, Kazuya; Kobayashi, Toshihiro; Sakuraba, Masao; Murota, Junichi.

2004. 915-922 Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

@conference{5c6ba34c283b4f69accf979d2d450b00,

title = "C atomic order doping at Si/Si1-xGex/Si heterointerface and improvement of thermal stability",

abstract = "Formation of Si/Si0.5Ge0.5/Si(100) epitaxial heterostructure by low pressure chemical vapor deposition and effect of the atomic layer order doping of C on thermal stability are investigated. The intermixing between Si and Ge during heat treatment at 700-750°C is scarcely suppressed by the continuously C doped Si/Si0.5Ge0.5(C)(C fraction 0.006)/Si heterostructure. On the other hand, atomic layer order C delta doping at the heterointerfaces effectively suppresses the intermixing even for the C atomic amount of 1.6×1013 cm-2.",

author = "Kazuya Takahashi and Toshihiro Kobayashi and Masao Sakuraba and Junichi Murota",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "915--922",

note = "SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - CONF

T1 - C atomic order doping at Si/Si1-xGex/Si heterointerface and improvement of thermal stability

AU - Takahashi, Kazuya

AU - Kobayashi, Toshihiro

AU - Sakuraba, Masao

AU - Murota, Junichi

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Formation of Si/Si0.5Ge0.5/Si(100) epitaxial heterostructure by low pressure chemical vapor deposition and effect of the atomic layer order doping of C on thermal stability are investigated. The intermixing between Si and Ge during heat treatment at 700-750°C is scarcely suppressed by the continuously C doped Si/Si0.5Ge0.5(C)(C fraction 0.006)/Si heterostructure. On the other hand, atomic layer order C delta doping at the heterointerfaces effectively suppresses the intermixing even for the C atomic amount of 1.6×1013 cm-2.

AB - Formation of Si/Si0.5Ge0.5/Si(100) epitaxial heterostructure by low pressure chemical vapor deposition and effect of the atomic layer order doping of C on thermal stability are investigated. The intermixing between Si and Ge during heat treatment at 700-750°C is scarcely suppressed by the continuously C doped Si/Si0.5Ge0.5(C)(C fraction 0.006)/Si heterostructure. On the other hand, atomic layer order C delta doping at the heterointerfaces effectively suppresses the intermixing even for the C atomic amount of 1.6×1013 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=17044406711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044406711&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:17044406711

SP - 915

EP - 922

T2 - SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -