Formation of Si/Si0.5Ge0.5/Si(100) epitaxial heterostructure by low pressure chemical vapor deposition and effect of the atomic layer order doping of C on thermal stability are investigated. The intermixing between Si and Ge during heat treatment at 700-750°C is scarcely suppressed by the continuously C doped Si/Si0.5Ge0.5(C)(C fraction 0.006)/Si heterostructure. On the other hand, atomic layer order C delta doping at the heterointerfaces effectively suppresses the intermixing even for the C atomic amount of 1.6×1013 cm-2.
|Number of pages||8|
|Publication status||Published - 2004 Dec 1|
|Event||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
Duration: 2004 Oct 3 → 2004 Oct 8
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||04/10/3 → 04/10/8|
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