Bulk Single Crystal Growth of W Co-Doped Ce:GdGaAlO by Czochralski Method

M. Ueno, K. J. Kim, K. Kamada, V. Babin, M. Nikl, T. Nihei, M. Yoshino, A. Yamaji, S. Toyoda, H. Sato, Y. Yokota, S. Kurosawa, Y. Ohashi, V. V. Kochurikhin, A. Yoshikawa

Research output: Contribution to journalArticlepeer-review

Abstract

Effects of the tungsten (W) ions co-doping on the crystal growth, optical and scintillation properties for the Czochralski (Cz) grown Ce:Gd3Ga3Al2O12(GGAG) single crystals were investigated. The W 0%, 0.1%, 0.3%, 1%, and 5% co-doped Ce 1%:GGAG single crystals with a diameter of 1 in and length of 60-80 mm were grown by the Cz method. The effective segregation coefficient of the W ions was found as 0.002, 0.001, and 0.005 for W 0.1%, 0.3%, and 1%, Ce:GGAG, respectively. The segregation of W ions in GGAG host, light yield, and scintillation decay of the W co-doped Ce:GGAG were evaluated. The light yield decreased as the concentration of W co-dopant increased and toward the tail of the crystal. Furthermore, the defect role and related charge trapping in the W co-doped crystals were monitored by the thermo-stimulated luminescence.

Original languageEnglish
Article number8963955
Pages (from-to)1045-1048
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume67
Issue number6
DOIs
Publication statusPublished - 2020 Jun

Keywords

  • Oxides
  • scintillator materials
  • scintillators
  • single crystal growth

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Bulk Single Crystal Growth of W Co-Doped Ce:GdGaAlO by Czochralski Method'. Together they form a unique fingerprint.

Cite this