Bulk quantum Hall effect in η-Mo4O11

S. Hill, J. S. Brooks, S. Uji, M. Takashita, C. Terakura, T. Terashima, H. Aoki, Z. Fisk, J. Sarrao

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We have observed a quantum Hall effect in the bulk quasi-two-dimensional conductor η-Mo4O11. The Hall resistance exhibits well defined plateaux, coincident with pronounced minima in the diagonal resistance. We present data for several different samples and contact geometries, and discuss a possible mechanism for the quantum Hall effect in this system. We also discuss the implications of these findings in the light of recent predictions concerning chiral metallic surface states in bulk quantum Hall systems.

Original languageEnglish
Pages (from-to)2667-2670
Number of pages4
JournalSynthetic Metals
Issue number1-3
Publication statusPublished - 1999 Jun 24
Externally publishedYes
EventProceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) - Montpellier
Duration: 1998 Jul 121998 Jul 18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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