Bulk quantum Hall effect in η-Mo4O11

S. Hill, J. S. Brooks, S. Uji, M. Takashita, C. Terakura, T. Terashima, H. Aoki, Z. Fisk, J. Sarrao

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We have observed a quantum Hall effect in the bulk quasi-two-dimensional conductor η-Mo4O11. The Hall resistance exhibits well defined plateaux, coincident with pronounced minima in the diagonal resistance. We present data for several different samples and contact geometries, and discuss a possible mechanism for the quantum Hall effect in this system. We also discuss the implications of these findings in the light of recent predictions concerning chiral metallic surface states in bulk quantum Hall systems.

Original languageEnglish
Pages (from-to)2667-2670
Number of pages4
JournalSynthetic Metals
Volume103
Issue number1-3
DOIs
Publication statusPublished - 1999 Jun 24
EventProceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) - Montpellier
Duration: 1998 Jul 121998 Jul 18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Bulk quantum Hall effect in η-Mo<sub>4</sub>O<sub>11</sub>'. Together they form a unique fingerprint.

Cite this