Bulk quantum Hall effect in η-Mo4O11

S. Hill, S. Uji, M. Takashita, C. Terakura, T. Terashima, H. Aoki, J. S. Brooks, Z. Fisk, J. Sarrao

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43 Citations (Scopus)

Abstract

We report the observation of a bulk quantum Hall effect in the quasi-two-dimensional conductor η-Mo4O11. The Hall resistance exhibits well-defined quantized plateaus, coincident with pronounced minima in the diagonal resistance. We propose a model involving (i) tiny quasi-two-dimensional electron and hole pockets, left over from an imperfectly nested charge-density wave, and (ii) the exchange of carriers between these mobile states and the localized charge-density-wave condensate. Together with a magnetic field, these factors result in well-separated bands of mobile states superimposed on a background continuum of localized states - the key ingredients for a quantum Hall effect. We also discuss the implications of these findings in the light of recent predictions concerning chiral metallic surface states in bulk quantum Hall systems.

Original languageEnglish
Pages (from-to)10778-10783
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number16
Publication statusPublished - 1998 Oct 15

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Hill, S., Uji, S., Takashita, M., Terakura, C., Terashima, T., Aoki, H., Brooks, J. S., Fisk, Z., & Sarrao, J. (1998). Bulk quantum Hall effect in η-Mo4O11. Physical Review B - Condensed Matter and Materials Physics, 58(16), 10778-10783.