Bulk electronic properties of Fe Si1-x Gex investigated by high-resolution x-ray spectroscopies

H. Yamaoka, N. Tsujii, H. Oohashi, D. Nomoto, I. Jarrige, K. Takahiro, K. Ozaki, K. Kawatsura, Y. Takahashi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We report an investigation of the bulk electronic properties of Fe in Fe Si1-x Gex (x=0, 0.11, 0.19, and 0.44) measured by high-resolution x-ray absorption spectroscopy at the Fe K edge, Fe Kβ x-ray emission, and 1s3p resonant x-ray emission spectroscopies. The emission data clearly show an increase in the magnetic moment when x increases from 0 to 0.44. This doping-induced spin transition is accompanied by the onset of the magnetic order at x≥0.2. The 1s3p resonant x-ray emission data reveal that the Fe 3d states exhibit a delocalized character, while no intermediate valence admixture takes place. This is at odd with the intermediate valence Kondo insulator model and rather supports the local density approximation band theory.

Original languageEnglish
Article number115201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number11
DOIs
Publication statusPublished - 2008 Mar 5
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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