Built-in electric field at cubic GaN/GaAs(001) heterointerfaces investigated by phase-selected photoreflectance excitation

Ryuji Katayama, Kentaro Onabe, Yasuhiro Shiraki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The built-in electric field applied at the cubic GaN/GaAs(001) heterointerfaces and its evolution during the growth process were evaluated using a phase-selected photoreflectance technique in combination with a variable-wavelength excitation light, to clarify the origin of the higher-electric-field signal observed in the previous photoreflectance study. The spectrum from LT-GaN/GaAs after 900 °C annealing contains a extremely-slow signal with a high electric-field strength and this signal became dominant with decreasing the penetration depth of the modulating light. This confirms the presence of a triangular well just beneath the GaN/GaAs interface regarding the direction of the band-bending investigated by the previous work, which can be attributed to the parallel-conduction path ideal for the holes to drift through.

Original languageEnglish
Pages (from-to)2749-2753
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume241
Issue number12
DOIs
Publication statusPublished - 2004 Oct 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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