Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

Mingling Sun, Takahide Kubota, Shigeki Takahashi, Yoshiaki Kawato, Yoshiaki Sonobe, Koki Takanashi

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3 Citations (Scopus)


Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

Original languageEnglish
Article number055902
JournalAIP Advances
Issue number5
Publication statusPublished - 2018 May 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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