Broader spectral width InGaAsP stacked active layer superluminescent diodes

Osamu Mikami, Hiroshi Yasaka, Yoshio Noguchi

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)

Abstract

Fabrication and characteristics of broader spectral width 1.3 μm and 1.5 μm InGaAsP superluminescent diodes having a novel stacked active layer (STAC-SLDs) structure are reported. The emission spectral width is successfully broadened as much as twice that of conventional SLDs, yielding spectral widths of 80 and 140 nm for the 1.3 μm and the 1.5 μm SLD, respectively.

Original languageEnglish
Pages (from-to)987-989
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number11
DOIs
Publication statusPublished - 1990 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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