Broadband terahertz-light emission by current-injection distributed-feedback dual-gate graphene-channel field-effect transistor

Deepika Yadav, Youssef Tobah, Junki Mitsushio, Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback (DFB) dual-gate graphene-channel transistor. The device exhibited a nonlinear threshold-like behavior with respect to the currentinjection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

Original languageEnglish
Title of host publication2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781943580279
DOIs
Publication statusPublished - 2017 Oct 25
Event2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States
Duration: 2017 May 142017 May 19

Publication series

Name2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
Volume2017-January

Other

Other2017 Conference on Lasers and Electro-Optics, CLEO 2017
Country/TerritoryUnited States
CitySan Jose
Period17/5/1417/5/19

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Fingerprint

Dive into the research topics of 'Broadband terahertz-light emission by current-injection distributed-feedback dual-gate graphene-channel field-effect transistor'. Together they form a unique fingerprint.

Cite this