Broadband terahertz-light emission by current-injection distributed-feedback dual-gate graphene-channel field- effect transistor

Deepika Yadav; Youssef Tobah; Junki Mitsushio; Gen Tamamushi; Takayuki Watanabe; Alexander A. Dubinov; Maxim Ryzhii; Victor Ryzhii; Taiichi Otsuji

doi:10.1364/CLEO_AT.2017.AM2B.7

Broadband terahertz-light emission by current-injection distributed-feedback dual-gate graphene-channel field- effect transistor

Deepika Yadav, Youssef Tobah, Junki Mitsushio, Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback (DFB) dual-gate graphene-channel transistor. The device exhibited a nonlinear threshold-like behavior with respect to the currentinjection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Applications and Technology, CLEO_AT 2017
Publisher	OSA - The Optical Society
ISBN (Print)	9781943580279
DOIs	https://doi.org/10.1364/CLEO_AT.2017.AM2B.7
Publication status	Published - 2017
Event	CLEO: Applications and Technology, CLEO_AT 2017 - San Jose, United States Duration: 2017 May 14 → 2017 May 19

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F43-CLEO_AT 2017

Other

Other	CLEO: Applications and Technology, CLEO_AT 2017
Country	United States
City	San Jose
Period	17/5/14 → 17/5/19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Access to Document

10.1364/CLEO_AT.2017.AM2B.7

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Yadav, D., Tobah, Y., Mitsushio, J., Tamamushi, G., Watanabe, T., Dubinov, A. A., Ryzhii, M., Ryzhii, V., & Otsuji, T. (2017). Broadband terahertz-light emission by current-injection distributed-feedback dual-gate graphene-channel field- effect transistor. In CLEO: Applications and Technology, CLEO_AT 2017 (Optics InfoBase Conference Papers; Vol. Part F43-CLEO_AT 2017). OSA - The Optical Society. https://doi.org/10.1364/CLEO_AT.2017.AM2B.7

Broadband terahertz-light emission by current-injection distributed-feedback dual-gate graphene-channel field- effect transistor. / Yadav, Deepika; Tobah, Youssef; Mitsushio, Junki; Tamamushi, Gen; Watanabe, Takayuki; Dubinov, Alexander A.; Ryzhii, Maxim; Ryzhii, Victor; Otsuji, Taiichi.

CLEO: Applications and Technology, CLEO_AT 2017. OSA - The Optical Society, 2017. (Optics InfoBase Conference Papers; Vol. Part F43-CLEO_AT 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yadav, D, Tobah, Y, Mitsushio, J, Tamamushi, G, Watanabe, T, Dubinov, AA, Ryzhii, M, Ryzhii, V & Otsuji, T 2017, Broadband terahertz-light emission by current-injection distributed-feedback dual-gate graphene-channel field- effect transistor. in CLEO: Applications and Technology, CLEO_AT 2017. Optics InfoBase Conference Papers, vol. Part F43-CLEO_AT 2017, OSA - The Optical Society, CLEO: Applications and Technology, CLEO_AT 2017, San Jose, United States, 17/5/14. https://doi.org/10.1364/CLEO_AT.2017.AM2B.7

Yadav, Deepika ; Tobah, Youssef ; Mitsushio, Junki ; Tamamushi, Gen ; Watanabe, Takayuki ; Dubinov, Alexander A. ; Ryzhii, Maxim ; Ryzhii, Victor ; Otsuji, Taiichi. / Broadband terahertz-light emission by current-injection distributed-feedback dual-gate graphene-channel field- effect transistor. CLEO: Applications and Technology, CLEO_AT 2017. OSA - The Optical Society, 2017. (Optics InfoBase Conference Papers).

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abstract = "We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback (DFB) dual-gate graphene-channel transistor. The device exhibited a nonlinear threshold-like behavior with respect to the currentinjection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.",

author = "Deepika Yadav and Youssef Tobah and Junki Mitsushio and Gen Tamamushi and Takayuki Watanabe and Dubinov, {Alexander A.} and Maxim Ryzhii and Victor Ryzhii and Taiichi Otsuji",

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AB - We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback (DFB) dual-gate graphene-channel transistor. The device exhibited a nonlinear threshold-like behavior with respect to the currentinjection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

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