TY - JOUR
T1 - Bridging semiconductor and magnetism
AU - Ohno, H.
N1 - Funding Information:
The authors thank fruitful collaboration particularly with Fumihiro Matsukura, Tomasz Dietl, Shingo Akita, and Shun Kanai. This work was supported in part by JSPS through FIRST program.
PY - 2013/4/7
Y1 - 2013/4/7
N2 - Carrier-induced ferromagnetism and its manipulation in Mn-doped III-V semiconductors, such as (In,Mn)As and (Ga,Mn)As, offer a wide variety of phenomena that originate from the interplay between magnetism and semiconducting properties, forming a bridge between semiconductor and magnetism. A review is given on the electrical manipulation of magnetism, its understanding, and potential applications both from the physics point of view and from the technological point of view. The electric-field study on magnetism is now being extended to magnetic metals, leading to an energy efficient way of magnetization reversal important for future semiconductor integrated circuit technology, yet another route to bridge semiconductor and magnetism in a fruitful way.
AB - Carrier-induced ferromagnetism and its manipulation in Mn-doped III-V semiconductors, such as (In,Mn)As and (Ga,Mn)As, offer a wide variety of phenomena that originate from the interplay between magnetism and semiconducting properties, forming a bridge between semiconductor and magnetism. A review is given on the electrical manipulation of magnetism, its understanding, and potential applications both from the physics point of view and from the technological point of view. The electric-field study on magnetism is now being extended to magnetic metals, leading to an energy efficient way of magnetization reversal important for future semiconductor integrated circuit technology, yet another route to bridge semiconductor and magnetism in a fruitful way.
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U2 - 10.1063/1.4795537
DO - 10.1063/1.4795537
M3 - Article
AN - SCOPUS:84880669123
VL - 113
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 13
M1 - 136509
ER -