Bridging semiconductor and magnetism

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15 Citations (Scopus)

Abstract

Carrier-induced ferromagnetism and its manipulation in Mn-doped III-V semiconductors, such as (In,Mn)As and (Ga,Mn)As, offer a wide variety of phenomena that originate from the interplay between magnetism and semiconducting properties, forming a bridge between semiconductor and magnetism. A review is given on the electrical manipulation of magnetism, its understanding, and potential applications both from the physics point of view and from the technological point of view. The electric-field study on magnetism is now being extended to magnetic metals, leading to an energy efficient way of magnetization reversal important for future semiconductor integrated circuit technology, yet another route to bridge semiconductor and magnetism in a fruitful way.

Original languageEnglish
Article number136509
JournalJournal of Applied Physics
Volume113
Issue number13
DOIs
Publication statusPublished - 2013 Apr 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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