In this research, the Si thin wire has been assembled on a glass trench to be a bridged resonator, which has the potential to measure multi-dimensional force by the combination of strain sensing and field effect transistor (FET) sensing using the mechanical vibration. The Si thin wire was designed to be the suitable structure to improve the detectable minimum force and measurement time. Analysing the current spectrum flowing in the resonator, the vibration measurement using the strain sensing and FET sensing, was demonstrated in a single dimension. The resonant frequency was observed by the spectrum of the current flowing in Si thin wire, which was observed at the same frequency by a laser Doppler vibrometer. Using the gate electrode, the additionally modulated current was observed. The effective and faster force mapping measurements using magnetic resonance force microscopy are expected by the proposed multi-dimensional force detection.
- force sensor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering